Phase-change random access memory device having multi-levels and method of manufacturing the same
View Patent ↗A phase-change random access memory (PCRAM) device and a method of manufacturing the same. The PCRAM includes a heating electrode having an upper surface protruding in a stepped shape and a phase-change material layer formed in a phase-change space on the heating electrode, the phase-change material layer having a plurality of portions having thicknesses corresponding to the stepped shape of the heating electrode.
1. A phase-change random access memory (PCRAM) device, comprising:
a heating electrode having an upper surface protruding in a stepped shape; and
a phase-change material layer formed in a phase-change space on the heating electrode, the phase-change material layer having a plurality of portions having thicknesses corresponding to the stepped shape of the heating electrode,
wherein the heating electrode comprises:
a first heating electrode portion formed in a lower portion of the phase-change space;
a second heating electrode portion formed on the first heating electrode portion and having a smaller diameter than the first heating electrode portion; and
a third heating electrode portion formed on the second heating electrode portion and having a smaller diameter than the second heating electrode portion.
2. The PCRAM device of claim 1 , wherein a diameter of the first heating electrode portion is the same as a diameter of the phase-change space.
3. The PCRAM device of claim 1 wherein the second heating electrode portion is arranged on a central portion of the first heating electrode portion.
4. The PCRAM device of claim 1 , wherein the third heating electrode portion is arranged on a central portion of the second heating electrode portion.
5. The PCRAM device of claim 1 , wherein the phase-change material layer comprises a single compound.
6. The PCRAM device of claim 1 , wherein one or more of the plurality of portions of the phase-change material layer is formed of a different material than other ones of the plurality of portions of the phase-change material layer.
7. The PCRAM device of claim 6 , wherein those of the plurality of portions the phase-change material layer, corresponding to a lowest step of the stepped-shaped heating electrode, have a higher phase-change temperature than those of the plurality of portions of the phase-change material layer corresponding to a highest step of the stepped-shaped heating electrode.
8. A phase-change random access memory (PCRAM) device, comprising:
a semiconductor substrate including a word line extending in one direction;
a first interlayer insulating layer formed on the substrate;
a switching element formed in the first interlayer insulating layer, the switching element being electrically connected to the word line;
a second interlayer insulating layer formed on the first interlayer insulating layer, the second interlayer insulating layer defining a phase-change space;
a heating electrode formed in the phase-change space, the heating element being electrically connected to the switching element, and the heating element having a surface including a protrusion;
a phase-change material layer disposed in the phase-change space on the heating electrode, the phase-change material layer having portions having different thicknesses corresponding to a height of the protrusion; and
a bit line formed on the phase-change material layer,
wherein the heating electrode comprises:
a first heating electrode portion formed on a lower portion of the phase-change space;
a second heating electrode portion formed on the first heating electrode portion and having a smaller diameter than the first heating electrode portion; and
a third heating electrode portion formed on the second heating electrode portion and having a smaller diameter than the second heating electrode portion.
9. The PCRAM of claim 8 , wherein the protrusion comprises a plurality of steps of different heights.
10. The PCRAM device of claim 8 , wherein the phase-change material layer comprises:
a first phase-change material layer portion disposed on the first heating electrode portion;
a second phase-change material layer portion disposed on the second heating electrode portion; and
a third phase-change material layer portion disposed on the third heating electrode portion.
11. The PCRAM device of claim 10 , wherein the phase-change material layer is formed so that a phase-change temperature of the phase-change material layer is increased in an order of the first phase-change material layer portion, the second phase-change material layer portion, and the third phase-change material layer portion.
12. The PCRAM device of claim 8 , wherein the phase-change material layer comprises a single compound.
13. A method of manufacturing a phase-change random access memory (PCRAM) device, the method comprising:
defining a phase-change space;
forming a heating electrode having a step-shaped protrusion, where the step-shaped protrusion defines a boundary of the phase-change space; and
forming, in the phase-change space, a phase-change material layer on the step-shaped protrusion of the heating electrode,
wherein forming the heating electrode having a step-shaped further comprises:
forming, within the phase-change space, a first heating electrode portion having a first diameter;
forming, on the first heating electrode portion, a second heating electrode portion having a second diameter that is smaller than the first diameter; and
forming, on the second heating electrode portion, a third heating electrode portion having a third diameter that is smaller than the second diameter.
14. The method of claim 13 , wherein forming the phase-change material layer further comprises:
forming a phase-change material layer portion on the first heating electrode portion;
forming a second phase-change material layer portion on the second heating electrode portion; and
forming a third phase-change material layer portion on the third heating electrode portion.