Matrix distributed power amplifier
View Patent ↗Disclosed is a matrix distributed amplifier (DA) having an input transmission line, an intermediate transmission line, and an output transmission line. A first plurality of amplifiers has inputs coupled to and spaced along the input transmission line and has outputs coupled to and spaced along the intermediate transmission line. A second plurality of amplifiers has inputs coupled to and spaced along the intermediate transmission line and has outputs coupled to and spaced along the output transmission line. A termination amplifier has an input coupled to the input transmission line and an output coupled to the intermediate transmission line. In at least one embodiment, a second termination amplifier has an input coupled to the intermediate transmission line and an output coupled to the output transmission line.
1. A matrix distributed amplifier (DA) comprising:
an input transmission line;
an intermediate transmission line;
an output transmission line;
a first plurality of amplifiers having inputs coupled to and spaced along the input transmission line and having outputs coupled to and spaced along the intermediate transmission line;
a second plurality of amplifiers having inputs coupled to and spaced along the intermediate transmission line and having outputs coupled to and spaced along the output transmission line; and
a termination amplifier having an input coupled to the input transmission line and an output coupled to the intermediate transmission line, and wherein selective successive ones of the first plurality of amplifiers and selective successive ones of the second plurality of amplifiers each include increased feedback.
2. The matrix DA of claim 1 further including an impedance matching network coupled between the input transmission line and the input of the termination amplifier.
3. The matrix DA of claim 1 further including a first RF choke coupled between a first bias input on the intermediate transmission line and a first voltage source.
4. The matrix DA of claim 3 further including a termination network coupled to a second bias input on the output transmission line.
5. The matrix DA of claim 3 further including a second RF choke coupled between a second bias input and a second voltage source.
6. The matrix DA of claim 1 further including a termination network coupled to a first bias input.
7. The matrix DA of claim 1 wherein the termination amplifier is a feedback amplifier.
8. The matrix DA of claim 1 wherein one of the second plurality of amplifiers is a second termination amplifier having an input coupled to a termination node of the intermediate transmission line and an output coupled to an output node of the output transmission line.
9. The matrix DA of claim 8 wherein the output node is adjacent to a DA output.
10. The matrix DA of claim 8 or 9 wherein the second termination amplifier is a feedback amplifier.
11. The matrix DA of claim 1 wherein successive ones of the first plurality of amplifiers and successive ones of the second plurality of amplifiers comprise tapered active impedance circuits to provide a gradually tapered impedance transition.
12. The matrix DA of claim 10 wherein selective successive ones of the first plurality of amplifiers and the successive ones of the second plurality of amplifiers each include transconductance devices with increased gate periphery.
13. The matrix DA of claim 1 wherein the first plurality of amplifiers and the second plurality of amplifiers comprise a plurality of tapered gate periphery transconductance devices, such that:
each of the plurality of tapered gate periphery transconductance devices comprises a gate and a source with a gate-to-source capacitance; and
the gate-to-source capacitance of each of the plurality of tapered gate periphery transconductance devices decreases moving from a DA input to a first output.
14. The matrix DA of claim 1 wherein the first plurality of amplifiers and the second plurality of amplifiers comprise a plurality of tapered gate periphery transconductance devices, such that:
each of the plurality of tapered gate periphery transconductance devices comprises a gate and a source with a gate-to-source capacitance; and
the gate-to-source capacitance of each of the plurality of tapered gate periphery transconductance devices increases moving from a DA input to a first output.
15. The matrix DA of claim 14 wherein an output impedance of each of the plurality of tapered gate periphery transconductance devices increase moving from the first input to the DA output to broaden an output power bandwidth of the matrix DA.
16. The matrix DA of claim 1 wherein the first plurality of amplifiers and the second plurality of amplifiers comprises a plurality of tapered gate periphery transconductance devices, such that an output impedance of each of the plurality of tapered gate periphery transconductance devices increases moving from a first input to a first output of the input transmission line to broaden an output power bandwidth of the matrix DA.
17. The matrix DA of claim 1 wherein the first plurality of amplifiers and the second plurality of amplifiers comprise gallium nitride (GaN) devices.
18. The matrix DA of claim 1 wherein each of the first plurality of amplifiers and each of the second plurality of amplifiers is a cascode amplifier comprising:
a first tapered gate transconductance device comprising:
an input gate;
an input source coupled to a common node; and
an input drain; and
a second tapered gate transconductance device comprising:
an output gate coupled to a common gate direct current (DC) supply;
an output source coupled to the input drain; and
an output drain.
19. The matrix DA of claim 18 wherein a gate-to-source capacitance of each of the first plurality of amplifiers increases moving from a DA input to a first output of the input transmission line and the second plurality of amplifiers increases moving from a bias input on the output transmission line to a DA output of the output transmission line.
20. The matrix DA of claim 18 wherein a gate-to-source capacitance of each of the first plurality of amplifiers decreases moving from a DA input to a first output of the input transmission line and the second plurality of amplifiers decreases moving from a second bias input to a DA output of the output transmission line.
21. A matrix distributed amplifier (DA) comprising:
a first plurality of amplifiers;
a second plurality of amplifiers;
a first plurality of inductive elements coupled between a DA input and a first output forming a node between each of the first plurality of inductive elements wherein each node is coupled to an input of a corresponding one of the first plurality of amplifiers;
a second plurality of inductive elements coupled between a first bias input and an intermediate output forming a node between each of the second plurality of inductive elements wherein each node is coupled to an output of a corresponding one of the first plurality of amplifiers and is also coupled to an input of a corresponding one of the second plurality of amplifiers;
a third plurality of inductive elements coupled between a second bias input and a DA output forming a node between each of the third plurality of inductive elements and wherein each node is coupled to an output of corresponding ones of the second plurality of amplifiers; and
an input of a termination amplifier coupled to the first output and an output of the termination amplifier coupled to a termination node adjacent to the intermediate output, and wherein selective successive ones of the first plurality of amplifiers and selective successive ones of the second plurality of amplifiers each include increased feedback.
22. The matrix DA of claim 21 wherein one of the second plurality of amplifiers is a second termination amplifier having an input coupled to the termination node and an output coupled to an output node nearest the DA output.
23. The matrix DA of claim 22 wherein the output node is adjacent to the DA output.
24. The matrix DA of claim 22 or 23 wherein the second termination amplifier is a feedback amplifier.
25. The matrix DA of claim 21 wherein successive ones of the first plurality of amplifiers and successive ones of the second plurality of amplifiers comprise tapered active impedance circuits to provide a gradually tapered impedance transition.
26. The matrix DA of claim 21 wherein the first plurality of amplifiers and the second plurality of amplifiers comprise gallium nitride (GaN) devices.