Semiconductor device

1. A semiconductor device, comprising:

vertical channel layers;

control gates and interlayer insulating layers stacked alternately with each other on a substrate and surrounding the vertical channel layers;

floating gates interposed only between the vertical channel layers and the control gates and separated from each other by the interlayer insulating layers; and

charge blocking layers interposed between the floating gates and the control gates, respectively.

2. The semiconductor device of claim 1 , wherein the charge blocking layers include first charge blocking layers having an annular shape to surround the floating gates, respectively.

3. The semiconductor device of claim 1 , wherein the charge blocking layers are interposed between the floating gates and the control gates and between the control gates and the interlayer insulating layers to cover top and bottom surfaces of the control gates, respectively.

4. The semiconductor device of claim 1 , wherein each of the floating gates includes a polysilicon layer, a metal layer, or a silicide layer.

5. The semiconductor device of claim 1 , wherein each of the floating gates has a thickness of 10 nm or less.

6. The semiconductor device of claim 1 , wherein each of the floating gates has a width smaller than or equal to that of each of the interlayer insulating layers.

7. The semiconductor device of claim 1 , wherein each of the control gates includes a polysilicon layer or a tungsten layer.

8. The semiconductor device of claim 1 , further comprising a first tunnel insulating layer covering a side wall of each of the vertical channel layer continuously.

9. The semiconductor device of claim 1 , further comprising:

at least one lower select transistor formed under the bottom of the control gates; and

at least one upper select transistor formed on the top of the control gates.

10. The semiconductor device of claim 1 , wherein each of the control gates and a corresponding one of the floating gates are located in a direction perpendicular to the vertical channel layers.

11. A semiconductor device comprising:

vertical channel layers;

control gates and interlayer insulating layers stacked alternately with each other on a substrate and surrounding the vertical channel layers;

floating gates interposed between the vertical channel layers and the control gates and separated from each other by the interlayer insulating layers; and

charge blocking layers interposed between the floating gates and the control gates, respectively,

wherein the charge blocking layers comprise:

first charge blocking layers having an annular shape to surround the floating gates, respectively; and

second charge blocking layers interposed between the first charge blocking layers and the control gates and between the control gates and the interlayer insulating layers to cover top and bottoms surfaces of the control gates, respectively.

12. A semiconductor device, comprising:

vertical channel layers;

control gates and interlayer insulating layers stacked alternately with each other on the substrate and surrounding the vertical channel layers;

floating gates interposed between the vertical channel layers and the control gates and separated from each other by the interlayer insulating layers;

charge blocking layers interposed between the floating gates and the control gates;

a pipe gate formed under the bottom of the control gates;

a pipe channel layer formed in the pipe gate and coupled to lower ends of the vertical channel layers;

select gates formed on the top of the control gates;

a second tunnel insulating layer covering the pipe channel layer; and

a floating gate conductive layer interposed between the second tunnel insulating layer and the pipe gate.