Band switch with switchable notch for receive carrier aggregation
View Patent ↗A band switch with a switchable notch for receive carrier aggregation is disclosed. The band switch has at least one input and an output with at least one series switch coupled between the at least one input and the output. The at least one series switch is adapted to selectively couple the input to the output in response to a first control signal. The band switch also includes at least one shunt switch coupled between the at least one input and a voltage node. The at least one shunt switch is adapted to selectively couple the at least one input to the voltage node in response to a second control signal. In addition, at least one notch filter is selectively coupled to the output in a shunt configuration, wherein the at least one notch filter is configured to attenuate signals within a stop band to attenuate harmonics and distortion.
1. A band switch with a switchable notch for receive carrier aggregation comprising:
at least one series switch coupled in series between at least one input and an output, and adapted to selectively couple the input to the output in response to a first control signal;
at least one shunt switch coupled between the input and a voltage node, the at least one shunt switch being adapted to selectively couple the input to the voltage node in response to a second control signal; and
at least one notch filter switchably coupled to the output in a shunt configuration, wherein the at least one notch filter comprise two sections that provide a second order notch.
2. The band switch of claim 1 further including a shunt output inductor coupled between the output and the voltage node, wherein the shunt output inductor provides electrostatic discharge protection as well as an additional resonating element for the at least one notch filter.
3. The band switch of claim 1 wherein the at least one notch filter is integrated with the band switch.
4. The band switch of claim 1 wherein the at least one series switch and/or at least one shunt switch is a micro-electro-mechanical systems (MEMS) switch.
5. The band switch of claim 1 wherein the at least one series switch and the at least one shunt switch are implemented using silicon-on-insulator (SOI), silicon-on-sapphire (SOS) or pseudomorphic high electron mobility transistor (pHemt) technology.
6. The band switch of claim 1 wherein a ratio of a parallel inductor and a parallel capacitor of one of the two sections and a ratio of a series inductor and a series capacitor of the other one of the two sections are selected to provide a series/parallel resonance at a given receive (RX) frequency to attenuate a third harmonic distortion generated in a transmit chain.
7. The band switch of claim 1 wherein the at least one notch filter comprises a series combination of a bypass switch that is adapted to open and close in response to a third control signal.
8. The band switch of claim 7 wherein the at least one notch filter comprises at least one capacitor and at least one inductor, wherein the at least one notch filter is configured to attenuate signals within a stop band range of frequencies determined by a value of the at least one capacitor and a value of the at least one inductor.
9. The band switch of claim 8 wherein the at least one capacitor is a programmable array of capacitors (PAC).
10. A front end (FE) for receive carrier aggregation comprising:
a power amplifier (PA);
a duplexer module; and
at least one band switch comprising:
at least one series switch coupled in series between at least one input and an output, and adapted to selectively couple the input to the output in response to a first control signal;
at least one shunt switch coupled between the input and a voltage node, and adapted to selectively couple the input to the voltage node in response to a second control signal; and
at least one notch filter switchably coupled to the output in a shunt configuration, wherein the at least one notch filter comprise two sections that provide a second order notch.
11. The FE of claim 10 further including a shunt output inductor coupled between the output and the voltage node, wherein the shunt output inductor provides electrostatic discharge protection as well as an additional resonating element for the at least one notch filter.
12. The FE of claim 10 wherein the at least one notch filter is integrated with the at least one band switch.
13. The FE of claim 10 wherein the at least one series switch and/or at least one shunt switch is a micro-electro-mechanical systems (MEMS) switch.
14. The FE of claim 10 wherein the at least one series switch and the at least one shunt switch are implemented using silicon-on-insulator (SOI), silicon-on-sapphire (SOS) or pseudomorphic high electron mobility transistor (pHemt) technology.
15. The FE of claim 10 wherein a ratio of a parallel inductor and a parallel capacitor of one of the two sections and a ratio of a series inductor and a series capacitor of the other one of the two sections are selected to provide a series/parallel resonance at a given receive (RX) frequency to attenuate a third harmonic distortion generated in a transmit chain.
16. The FE of claim 10 wherein the at least one notch filter comprises a series combination of a bypass switch that is adapted to open and close in response to a third control signal.
17. The FE of claim 16 wherein the at least one notch filter comprises at least one capacitor and at least one inductor, wherein the at least one notch filter is configured to attenuate signals within a stop band range of frequencies determined by a value of the at least one capacitor and a value of the at least one inductor.
18. The FE of claim 17 wherein the at least one capacitor is a programmable array of capacitors (PAC).