Sputtering target, manufacturing method thereof, and manufacturing method of semiconductor element
View Patent ↗According to an embodiment, two or more sets of knead forging are performed where one set is cold forging processes in directions parallel to and perpendicular to a thickness direction of a columnar titanium material. The titanium material is heated to a temperature of 700° C. or more to induce recrystallization, and thereafter, two or more sets of knead forging are performed where one set is the cold forging processes in the directions parallel to and perpendicular to the thickness direction. Further, the titanium material is cold rolled, and is heat-treated to a temperature of 300° C. or more.
1. A sputtering target made up of a titanium material of which purity is 99.99 mass % or more and an average crystal grain size is 15 μm or less,
wherein the sputtering target has a surface to be sputtered, and
wherein, when X-ray diffraction of the surface is measured, a relative intensity I (100) of a diffraction peak from a (100) plane, a relative intensity I (002) of a diffraction peak from a (002) plane, and a relative intensity I (101) of a diffraction peak from a (101) plane satisfy a condition of I (101) >I (002) >I (100) at the surface,
wherein, when X-ray diffraction at a part parallel to the surface in a depth direction of the sputtering target is measured, the relative intensity I (100) , the relative intensity I (002) , and the relative intensity I (101) satisfy a condition of I (101) >I (002) >I (100) , and
wherein a ghost grain does not exist in the sputtering target.
2. The sputtering target according to claim 1 ,
wherein a crystal orientation of the sputtering surface is a random orientation.
3. The sputtering target according to claim 1 ,
wherein a thickness of the sputtering target is 10 mm or more.
4. The sputtering target according to claim 1 ,
wherein a diameter of the sputtering target is 300 mm or more.