IP Library Granted Patent US 9,325,056
Granted Patent B2
US 9,325,056 · App. 13/609,388 · Granted Apr 26, 2016

Radiation efficient integrated antenna

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Quick Facts
Patent No.
US 9,325,056
App. No.
13/609,388
Granted
Apr 26, 2016
Kind
B2
Abstract

An apparatus includes a dielectric slab having first and opposing second major surfaces. A planar antenna element is located on the first major surface. A via formed through the dielectric slab is conductively connected to the antenna element. A plurality of solder bump pads is located on the second major surface and is configured to attach the dielectric slab to an integrated circuit.

Claims (26)

1. An apparatus, comprising:

a dielectric slab having first and opposing second major outermost surfaces;

a planar antenna element located on said first major outermost surface;

first and second vias each located through said dielectric slab and extending from said first major outermost surface to said second major outermost surface and conductively connected to said planar antenna element;

an integrated circuit joined to said dielectric slab via a plurality of solder bump pads located on said second outermost major surface and between said second major outermost surface and said integrated circuit, said integrated circuit having a ground plane located on an outermost surface thereof; and

antenna feed lines located on said outermost surface of said integrated circuit and respectively connected to said planar antenna element by said first and second vias.

2. The apparatus as recited in claim 1 , further comprising a plurality of ground bumps located adjacent said antenna feed line.

3. The apparatus as recited in claim 1 , wherein said dielectric slab comprises a liquid crystal polymer.

4. The apparatus as recited in claim 1 , wherein said via has an aspect ratio of at least about 2:1.

5. The apparatus as recited in claim 1 , further comprising a substantially uninterrupted ground plane located on said second major outermost surface.

6. The apparatus as recited in claim 1 , further comprising a carrier substrate joined to said first major outermost surface via an adhesion layer.

7. The apparatus as recited in claim 1 , wherein said dielectric slab has a thickness of about 100 μm.

8. The apparatus as recited in claim 1 , wherein said first via is located offset from a geometric center of said planar antenna element and about on a first axis of said planar antenna element, and said second via is located offset from said geometric center of said planar antenna element and about on a second orthogonal axis of said planar antenna element.

9. The apparatus as recited in claim 1 , wherein said planar antenna element is configured to radiate in two orthogonal linearly-polarized modes.

10. The apparatus as recited in claim 1 , wherein said planar antenna element is configured to produce circular polarized radiation.

11. A method comprising:

forming a planar antenna element on a first major outermost surface of a dielectric slab;

locating within said dielectric slab first and second vias conductively connected to said antenna element, and each of said first and second vias extending from said first major outermost surface to a second major outermost surface of said dielectric slab;

forming a plurality of solder bump pads on said second major outermost surface, said solder bump pads being configured to attach said dielectric slab to an integrated circuit;

joining said integrated circuit to said dielectric slab via, said plurality of solder bump pads located on said second major outermost surface and between said second major outermost surface and said integrated circuit, said integrated circuit having a ground plane located on an outermost surface thereof; and

placing antenna feed lines on said outermost surface of said integrated circuit and connecting said antenna feed lines to said planar antenna element by said first and second vias.

12. The method as recited in claim 11 , further comprising forming a plurality of ground bumps located adjacent said antenna feed lines.

13. The method as recited in claim 11 , wherein said first via is located offset from a geometric center of said planar antenna element and about on a first axis of said planar antenna element, and said second via is located offset from said geometric center of said planar antenna element and about on a second orthogonal axis of said planar antenna element.

14. The method as recited in claim 11 , further comprising a substantially uninterrupted ground plane located on said second major outermost surface.

15. The method as recited in claim 11 , further comprising joining said first major outermost surface to a carrier substrate via an adhesion layer.

16. The method as recited in claim 11 , wherein forming said first and second vias comprises laser ablation of said dielectric slab.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2014
From: CREDIT SUISSE AG
To: ALCATEL-LUCENT USA INC.
Reel/Frame 033949/0016 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 16, 2013
From: ALCATEL-LUCENT USA INC.
To: ALCATEL LUCENT
Reel/Frame 031420/0703 →
SECURITY INTEREST Recorded Mar 7, 2013
From: ALCATEL-LUCENT USA INC.
To: CREDIT SUISSE AG
Reel/Frame 030510/0627 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2012
From: KANEDA, NORIAKI; BASAVANHALLY, NAGESH; BAEYENS, YVES; CHEN, YOUNG-KAI; SHAHRAMIAN, SHAHRIAR
To: ALCATEL-LUCENT USA, INC.
Reel/Frame 028932/0451 →