IP Library › Granted Patent US 8,846,275
Granted Patent B2
US 8,846,275 · App. 13/610,367 · Granted Sep 30, 2014

Method for mask patterns

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Quick Facts
Patent No.
US 8,846,275
App. No.
13/610,367
Granted
Sep 30, 2014
Kind
B2
Abstract

A design method for mask patterns is provided. The design method includes providing an exposure machine with a mask including an optical proximity correction (OPC) pattern including a first clear area and a first dark area, wherein the first clear area surrounds the first dark area, placing a substrate in the exposure machine, and exposing the substrate to light to form an imaged pattern on the substrate, wherein the imaged pattern has an area smaller than that of the optical proximity correction (OPC) pattern.

Claims (14)

1. A design method for mask patterns, comprising:

providing an exposure machine with a mask comprising an optical proximity correction (OPC) pattern comprising a first clear area and a first dark area, wherein the first clear area surrounds the first dark area, the first clear area is a continuous clear area and the first dark area is a continuous dark area;

placing a substrate in the exposure machine; and

exposing the substrate to light to form an imaged pattern on the substrate, wherein the imaged pattern has an area smaller than that of the optical proximity correction (OPC) pattern.

2. The design method for mask patterns as claimed in claim 1 , wherein the exposure machine is a proximity exposure machine.

3. The design method for mask patterns as claimed in claim 1 , wherein the optical proximity correction (OPC) pattern further comprises a second clear area surrounded by the first dark area.

4. The design method for mask patterns as claimed in claim 3 , wherein the second clear area is in a shape of a rectangle, polygon, circle or ellipse.

5. The design method for mask patterns as claimed in claim 3 , wherein the first clear area comprises a plurality of separated areas.

6. The design method for mask patterns as claimed in claim 5 , wherein the second clear area is in a shape of a rectangle, polygon, circle or ellipse.

7. The design method for mask patterns as claimed in claim 1 , wherein the first dark area is in a shape of a cross.

8. The design method for mask patterns as claimed in claim 7 , wherein the first clear area has at least one chamfered corner and the optical proximity correction (OPC) pattern further comprises at least one second dark area disposed in the chamfered corner of the first clear area.

9. The design method for mask patterns as claimed in claim 7 , wherein the optical proximity correction (OPC) pattern further comprises a second clear area disposed in the center of the first dark area and the second clear area is in a shape of a rectangle, polygon, circle or ellipse.

10. The design method for mask patterns as claimed in claim 9 , wherein the first clear area has at least one chamfered corner and the optical proximity correction (OPC) pattern further comprises at least one second dark area disposed in the chamfered corner of the first clear area.

11. The design method for mask patterns as claimed in claim 1 , wherein the imaged pattern is a via hole pattern.