Solid-state imaging device
The present invention provides a solid-state imaging device in which high S/N is achieved. A solid-state imaging device includes a photodiode, a transfer transistor, a floating diffusion, a floating diffusion wiring, an amplifying transistor, a power line, and first output signal lines, in which the first output signal lines are formed one on each side of the floating diffusion wiring in a layer having the floating diffusion wiring formed on a semiconductor substrate, and the power line is formed above the floating diffusion wiring.
1. A solid-state imaging device comprising:
a photodiode that is formed in a semiconductor substrate and stores electric charges according to an amount of light received;
a transfer transistor that reads out the electric charges from the photodiode;
a floating diffusion to which the electric charges read out by the transfer transistor is transferred;
a floating diffusion wiring connected to the floating diffusion;
an amplifying transistor having a gate connected to the floating diffusion wiring;
a power line connected to one of a drain and a source of the amplifying transistor; and
a first output signal line connected to the other of the drain and the source of the amplifying transistor,
wherein the first output signal line includes a first wiring, a second wiring, and a third wiring in a layer having the floating diffusion wiring formed on the semiconductor substrate, the first wiring and the second wiring being formed on the separate sides of the floating diffusion wiring, and the third wiring connecting the first wiring and the second wiring, and
the power line is formed above the floating diffusion wiring.
2. The solid-state imaging device according to claim 1 ,
wherein the first output signal line further includes a fourth wiring that connects the first wiring and the second wiring, and
the floating diffusion wiring is surrounded by the first wiring, the second wiring, the third wiring, and the fourth wiring.
3. The solid-state imaging device according to claim 1 , wherein the first output signal line is connected to a second output signal line formed between the floating diffusion wiring and the power line.
4. The solid-state imaging device according to claim 1 , wherein the floating diffusion wiring is longer in height than in width.
5. The solid-state imaging device according to claim 1 , wherein a distance between the floating diffusion wiring and the first output signal line is longer than a distance between the floating diffusion wiring and the power line.