System and method for estimating the short circuit current of a solar device
View Patent ↗Described herein is a method and system for determining a short-circuit current of a solar device before the solar device is tested in a solar simulator. A solar device includes a substrate layer, a front contact layer, a window/emitter layer, an absorber layer and a back contact. A thickness of the window/emitter layer and an absorption wavelength of the absorber layer are determined. The window/emitter layer thickness and absorber layer absorption wavelength are used with a fitting parameter that corresponds to transmission properties of the substrate and first contact layers in order to determine the solar device's short-circuit current.
1. A method of determining a short-circuit current for a solar device, the method comprising:
determining a thickness of a window/emitter layer of the solar device before the device is fully assembled;
determining an absorption wavelength of an absorber layer of the solar device before the solar device is fully assembled;
determining a fitting parameter that indicates transmission properties of at least one transparent layer of the solar device; and
using the determined window/emitter layer thickness, the determined absorber layer absorption wavelength and the determined fitting parameter to determine the short-circuit current for the solar device.
2. The method of claim 1 , wherein the short-circuit current is determined before the solar device is fully assembled.
3. The method of claim 2 , wherein the short-circuit current is determined before the solar device is tested using a solar simulator.
4. The method of claim 2 , wherein the short-circuit current is determined before a back contact is formed on the solar device.
5. The method of claim 1 , wherein determining the thickness of the solar device's window/emitter layer further comprises illuminating the device using light of a known wavelength.
6. The method of claim 5 , wherein determining the thickness of the solar device's window/emitter layer further comprises illuminating the device using light with a wavelength between 450 and 550 nm.
7. The method of claim 5 , wherein determining the thickness of the solar device's window/emitter layer further comprises using a detector to detect an amount of the illuminated light transmitted through the device.
8. The method of claim 7 , further comprising comparing the detected amount of transmitted light with the amount of illuminated light to determine a ratio that indicates the transmissivity of the device's window/emitter layer at the known wavelength.
9. The method of claim 8 , further comprising using a lookup table to determine the thickness of the device's window/emitter layer corresponding to the window/emitter layer's transmissivity at the known wavelength.
10. The method of claim 5 , wherein determining the thickness of the solar device's window/emitter layer further comprises using a detector to detect an amount of the illuminated light reflected by the device.
11. The method of claim 10 , further comprising comparing the detected amount of reflected light with the amount of illuminated light to determine a ratio that indicates the transmissivity of the device's window/emitter layer at the known wavelength.
12. The method of claim 1 , wherein determining the absorption wavelength of the solar device's absorber layer further comprises illuminating the device using light of a plurality of known wavelengths.
13. The method of claim 12 , wherein determining the absorption wavelength of the solar device's absorber layer further comprises using a detector to detect the amount of the illuminated light transmitted through or reflected by the solar device for each of the plurality of known wavelengths.
14. The method of claim 13 , further comprising comparing the detected amount of transmitted light with the amount of illuminated light for each wavelength to determine a ratio that indicates the transmissivity of the device's absorber layer at each of the plurality of wavelengths, and creating a transparency-wavelength curve by plotting the determined transmissivity ratios against corresponding wavelengths.
15. The method of claim 14 , wherein the absorber layer's absorption wavelength is an x-axis intercept of a tangent line to the transparency-wavelength curve at a point where a second derivative of the transparency-wavelength curve equals zero.
16. The method of claim 12 , wherein determining the absorption wavelength of the solar device's absorber layer further comprises using a detector to detect an amount of the illuminated light reflected by the device for each of the plurality of known wavelengths.
17. The method of claim 16 , further comprising comparing the detected amount of reflected light with the amount of illuminated light for each wavelength to determine a ratio that indicates the transmissivity of the device's absorber layer at each of the plurality of wavelengths.
18. The method of claim 1 , wherein determining the fitting parameter that indicates transmission properties of the solar device's substrate and front contact layers further comprises determining an absorption wavelength and short-circuit current for each of a first and second modified solar devices, the first and second modified solar devices each having a substrate and a front contact that are materially and structurally the same as the solar device's substrate and front contact, the first and second modified solar devices each lacking a window/emitter layer, and the first and second modified solar devices each having an absorber layer with different absorption wavelengths.
19. The method of claim 18 , further comprising using the absorption wavelengths and short-circuit currents of the first and second modified solar devices to determine a the fitting parameter for the solar device's substrate and front contact.
20. The method of claim 19 , wherein the equation Isc=a×BE+d is used to determine the fitting parameter d of the solar device's substrate and front contact layers, where Isc is the short-circuit current of at least one of the first and second modified solar devices, BE is the absorption wavelength of the at least one of the first and second modified solar devices, and a is a coefficient.
21. The method of claim 1 , wherein the equation Isc=a×BE+b×Tcds+c×Tcds×BE+d is used to determine the solar device's short-circuit current Isc, where BE is the absorption wavelength for the solar device's absorber layer, Tcds is the thickness of the solar device's window/emitter layer, d is the fitting parameter for the solar device's substrate and front contact. and a, b and c are coefficients.
22. The method of claim 1 , wherein the fitting parameter indicates at least one of transparency or reflection losses of the solar device's substrate and front contact layer combination.