Semiconductor optical device
A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.
1. A semiconductor optical device comprising:
a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer,
wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and
wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, an i-type region disposed between the n-type region and the p-type region, and a p-i-n homojunction to which a forward voltage is applied and which includes the p-type region and the i-type region and the n-type region, and
wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer, and
wherein the band gap of the second semiconductor layer is set so that an absolute value of a variation of an equivalent refractive index of a three-layered rib portion including the second semiconductor layer, the third semiconductor layer and the first semiconductor layer on a lower side of the second semiconductor layer, which is produced by carrier injection into the three-layered rib portion, is larger than an absolute value of a variation of an equivalent refractive index of a two-layered rib portion which includes the second semiconductor layer and the first semiconductor layer on a lower side of the second semiconductor layer and has an identical size to the three-layered rib portion, which is produced by carrier injection into the two-layered rib portion.
2. The semiconductor optical device according to claim 1 ,
wherein the third semiconductor layer further covers side faces of the second semiconductor layer.
3. The semiconductor optical device according to claim 1 , further comprising:
a groove disposed on the i-type region,
wherein the second semiconductor layer is disposed on the groove, and at least a portion of side faces thereof contacts to the i-type region.
4. The semiconductor optical device according to claim 1 ,
wherein the first semiconductor layer is thinner than a region thereof contacting to the second semiconductor layer on both sides of the second semiconductor layer.
5. The semiconductor optical device according to claim 1 ,
wherein the first semiconductor layer and the third semiconductor layer are single-crystal silicon layers, and
wherein the second semiconductor layer is a single-crystal silicon germanium layer.
6. The semiconductor optical device according to claim 5 ,
wherein a composition ratio of germanium in the second semiconductor layer is greater than 0 and not greater than 0.35.
7. The semiconductor optical device according to claim 5 ,
wherein the first semiconductor layer, the second semiconductor layer and the third semiconductor layer have a (110) plane direction.
8. A semiconductor optical device comprising:
a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer,
wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and
wherein the first semiconductor layer includes an n-type region, a p-type region contacting to the n-type region and having a boundary with the n-type region extending in the one direction, and a pn homojunction to which a forward voltage is applied and which includes the p-type region and the n-type region, and
wherein the second semiconductor layer is disposed on the boundary and has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer, and
wherein the band gap of the second semiconductor layer is set so that an absolute value of a variation of an equivalent refractive index of a three-layered rib portion including the second semiconductor layer, the third semiconductor layer and the first semiconductor layer on a lower side of the second semiconductor layer, which is produced by carrier injection into the three-layered rib portion, is larger than an absolute value of a variation of an equivalent refractive index of a two-layered rib portion which includes the second semiconductor layer and the first semiconductor layer on a lower side of the second semiconductor layer and has an identical size to the three-layered rib portion, which is produced by carrier injection into the two-layered rib portion.
9. The semiconductor optical device according to claim 8 ,
wherein the first semiconductor layer and the third semiconductor layer are single-crystal silicon layers, and
wherein the second semiconductor layer is a single-crystal silicon germanium layer.
10. The semiconductor optical device according to claim 8 ,
wherein the first semiconductor layer, the second semiconductor layer and the third semiconductor layer have a (110) plane direction.