3-D nonvolatile memory device and method of manufacturing the same

1. A three-dimensional (3-D) nonvolatile memory device, comprising:

a support protruded from a surface of a substrate and configured to have an inclined sidewall;

channel structures each configured to comprise interlayer insulating layers and channel layers which are alternately stacked over the substrate including the support, wherein each of the channel structures comprises a cell region where the channel layers are horizontally stacked and a contact region where the channel layers are bent upward along the inclined sidewall of the support and each of the channel layers are exposed;

select lines formed over the contact region of the channel structures; and

a pillar type channels coupled to respective channel layers at the contact region and penetrating the select lines,

wherein the support has a trapezoidal shape and widths of the channel layers exposed on the top surface of the channel structures are determined by an inclined angle of the support.

2. The 3-D nonvolatile memory device of claim 1 , further comprises:

a gate insulating layer interposed between the channel layers and the select lines.

3. The 3-D nonvolatile memory device of claim 2 , further comprising bit lines formed over the select lines, coupled to the pillar type channels, and extended in a direction identical with the channel structures.

4. The 3-D nonvolatile memory device of claim 1 , wherein the select lines are arranged at a substantially same height.

5. The 3-D nonvolatile memory device of claim 1 , wherein the channel structure comprises a top surface in which the contact region and the cell region have a substantially same height without a step.

6. The 3-D nonvolatile memory device of claim 1 , wherein the support is formed by etching the substrate.

7. The 3-D nonvolatile memory device of claim 1 , wherein the support is formed by etching an insulating layer on the substrate.

8. A three-dimensional (3-D) nonvolatile memory device, comprising:

a support protruded from a surface of a substrate and configured to have an inclined sidewall; and

channel structures each configured to comprise interlayer insulating layers and channel layers which are alternately stacked over the substrate including the support, wherein each of the channel structures comprises a cell region where the channel layers are horizontally stacked and a contact region where the channel layers are bent upward along the inclined sidewall of the support and each of the channel layers are exposed,

wherein the support includes a dummy structure formed on the substrate and

an insulating layer formed on an entire surface of the substrate comprising the dummy structure.

9. The 3-D nonvolatile memory device of claim 8 , wherein the dummy structure is a dummy transistor formed on the substrate.

10. The 3-D nonvolatile memory device of claim 1 , wherein a distance between the channel structures sharing the support is determined by a width of the flat top surface of the support.

11. The 3-D nonvolatile memory device of claim 1 , wherein an angle of the inclined sidewall is 5 to 85°.

12. The 3-D nonvolatile memory device of claim 1 , wherein the select lines are placed at different level, arranged in staggered type, and coupled to the respective channel layers.

13. The 3-D nonvolatile memory device of claim 1 , wherein each of the select lines is coupled to at least two adjacent channel layers, and select lines adjacent in a stack direction, from among the select lines, are coupled in common to some of the channel layers.