Apparatus and method for repairing vaginal reconstruction
View Patent ↗A system for treating vaginal prolapse including two implants, each implant including a mesh support portion and two mesh extension portions, wherein for each implant the support portion is capable of contacting vaginal sulcus tissue while the two extension portions extend to tissue of an obturator foramen. The implant may include a mesh strip, with the support portion having a length between 4 and 6 centimeters, with the total length of the mesh strip being between 15 and 20 centimeters, and with the mesh strip being of substantially uniform width in the range from 0.5 to 1.3 centimeters. The implant may include two sutures, with one suture connected at each opposing end of the implant, and/or the implant may include one or multiple sutures connected along a length of the implant.
1. A method of treating cystocele with a system comprising first and second implants, each implant comprising a mesh support portion and two mesh extension portions, wherein the mesh support portion of each implant is configured for contacting vaginal sulcus tissue while the two mesh extension portions extend to tissue of an obturator foramen, the method comprising:
making an upper vaginal midline incision;
passing the first implant through the vaginal incision;
placing the mesh support portion of the first implant in contact with lateral vaginal tissue on a left side of the vagina;
making a superior left external incision at an inner thigh adjacent to a left obturator foramen;
preparing a tissue path between the superior left external incision and the lateral vaginal tissue on the left side of the vagina;
passing a first mesh extension portion of the first implant through the tissue path between the superior left external incision and the lateral vaginal tissue on the left side of the vagina;
making an inferior left external incision at the inner thigh adjacent to the left obturator foramen;
preparing a tissue path between the inferior left external incision and the lateral vaginal tissue on the left side of the vagina;
passing a second mesh extension portion of the first implant through the tissue path between the inferior left external incision and the lateral vaginal tissue on the left side of the vagina;
passing the second implant through the vaginal incision;
placing the mesh support portion of the second implant in contact with lateral vaginal tissue on a right side of the vagina;
making a superior right external incision at the inner thigh adjacent to a right obturator foramen;
preparing a tissue path between the superior right external incision and the lateral vaginal tissue on the right side of the vagina;
passing a third mesh extension portion of the second implant through the tissue path between the superior right external incision and the lateral vaginal tissue on the right side of the vagina;
making an inferior right external incision at the inner thigh adjacent to the right obturator foramen;
preparing a tissue path between the inferior right external incision and the lateral vaginal tissue on the right side of the vagina; and
passing a fourth mesh extension portion of the second implant through the tissue path between the inferior right external incision and the lateral vaginal tissue on the right side of the vagina.
2. The method of claim 1 ;
wherein the first implant comprises a first mesh support portion having a length that corresponds with a distance between a superior incision and an inferior incision through a first obturator foramen, and the first and second mesh extension portions extend from opposite ends of the first mesh support portion, wherein each of the first and second mesh extension portions has a longitudinal axis that is at an angle greater than zero relative to a longitudinal axis of the first mesh support portion;
wherein the second implant comprises a second mesh support portion having a length that corresponds with a distance between a superior incision and an inferior incision through a second obturator foramen, and the third and fourth mesh extension portions extend from opposite ends of the second mesh support portion, wherein each of the third and fourth mesh extension portions has a longitudinal axis that is at an angle greater than zero relative to a longitudinal axis of the second mesh support portion; and
wherein the first and second mesh support portions of the first and second implants are sized for contacting vaginal sulcus tissue while the two extension portions of each of the first and second implants extend to the superior and inferior incisions of the first and second obturator foramen, respectively.
3. The method of claim 1 , further comprising at least one placement suture attached to the first mesh support portion and at least one placement suture attached to the second mesh support portion, wherein each of the placement sutures is attachable to vaginal sulcus tissue.
4. The method of claim 1 wherein each implant comprises a mesh strip, each support portion has a length of from 4 to 6 centimeters, the total length of each mesh strip is from 15 to 20 centimeters, and the width of each mesh strip is in the range from 0.5 to 1.3 centimeters.
5. The method of claim 1 comprising one or multiple helical needles.
6. The method of claim 1 wherein each of the first and second implants comprises two sutures, one suture connected at each opposing end of the respective implant.
7. The method of claim 1 wherein each of the first and second implants comprises one or multiple sutures connected along a length of the implant.
8. The method of claim 1 wherein each of the first and second implants comprises a sheath that covers the support portion and at least portions of the extension portions.