Methods and apparatus for measuring analytes using large scale FET arrays
View Patent ↗Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.
1. A sensor comprising:
an ion-sensitive field effect transistor (ISFET) to generate a sensor signal indicating an ion concentration due to sequencing reactions occurring proximate to the ISFET; and
readout circuitry to produce an output signal based on the sensor signal, wherein the readout circuitry is operable over a range of sensor signal levels that is narrower than a range of ion concentration levels detectable by the ISFET.
2. The sensor of claim 1 , wherein the sensor signal is based on a threshold voltage of the ISFET.
3. The sensor of claim 1 , wherein the sensor signal is a voltage level at a terminal of the ISFET.
4. The sensor of claim 3 , wherein the readout circuitry includes a sample and hold capacitor, and a first switch coupled between the sample and hold capacitor and the terminal of the ISFET.
5. The sensor of claim 4 , wherein the first switch is a single-transistor switch.
6. The sensor of claim 1 , further comprising a bias circuit to apply a read voltage to a first terminal of the ISFET, and to establish a voltage difference between the first terminal and a second terminal of the ISFET.
7. The sensor of claim 6 , wherein the bias circuit includes a diode-connected transistor to maintain the voltage difference between the first terminal of the ISFET and the second terminal of the ISFET.
8. The sensor of claim 6 , wherein the bias circuit includes a current source to provide a bias current through the ISFET to generate the sensor signal as a voltage level at the second terminal of the ISFET.
9. The sensor of claim 8 , wherein the current source is coupled between a bias voltage line and the second terminal of the ISFET.
10. The sensor of claim 1 , wherein the sequencing reactions include incorporation of one or more nucleotides into at least one template nucleic acid.
11. The sensor of claim 10 , wherein the sensor signal indicates a number of the nucleotides incorporated into the at least one template nucleic acid.
12. The sensor of claim 1 , wherein the range of sensor signal levels operable by the readout circuit corresponds to detected ion concentration levels between pH 7 and pH 9.
13. The sensor of claim 1 , wherein the range of sensor signal levels operable by the readout circuit corresponds to detected ion concentration levels of 2 pH units.