Semiconductor devices having a trench isolation layer and methods of fabricating the same
Semiconductor devices including a trench isolation layer are provided. The semiconductor device includes a substrate having a trench therein, a liner insulation layer that covers a bottom surface and sidewalls of the trench and includes micro trenches located at bottom inner corners of the liner insulation layer, a first isolating insulation layer filling the micro trenches and a lower region of the trench that are surrounded by the liner insulation layer, and a second isolating insulation layer filling the trench on the first isolating insulation layer. The liner insulation layer on sidewalls of an upper region of the trench having a thickness that gradually increases toward a bottom surface of the trench, and the liner insulation layer on sidewalls of the lower region of the trench having a thickness that is uniform. Related methods are also provided.
1. A semiconductor device including a trench isolation layer, the semiconductor device comprising:
a substrate having a trench therein;
a liner insulation layer covering a bottom surface and sidewalls of the trench and including micro trenches located at bottom inner sidewall corners of the liner insulation layer, the liner insulation layer on sidewalls of an upper region of the trench having a gradually increasing thickness toward a bottom surface of the trench and the liner insulation layer on sidewalls of a lower region of the trench having a uniform thickness;
a first isolating insulation layer completely filling the micro trenches located in the sidewall corner of the liner insulation layer and the lower region of the trench that is surrounded by the liner insulation layer; and
a second isolating insulation layer filling the trench on the first isolating insulation layer.
2. The semiconductor device of claim 1 , wherein the liner insulation layer includes a nitride layer.
3. The semiconductor device of claim 1 , wherein a top surface of the first isolating insulation layer is located in the lower region of the trench.
4. The semiconductor device of claim 1 , wherein the first isolating insulation layer includes a high density plasma (HDP) oxide layer.
5. The semiconductor device of claim 1 , wherein the second isolating insulation layer includes an ozone tetra-ethyl-ortho-silicate (O 3 TEOS) layer.