Semiconductor inspection method and semiconductor inspection apparatus
View Patent ↗A semiconductor inspection apparatus ( 100 ) is an apparatus for inspecting a semiconductor device. The semiconductor inspection apparatus ( 100 ) includes a pulsed laser light source ( 14 ) for emitting pulsed laser light ( 2 ) toward a substrate ( 1 ) with a semiconductor device formed thereon, an electromagnetic wave pulse application part ( 18 ) for applying a reverses-biasing electromagnetic wave pulse ( 4 ) for applying a reverse bias to an application position ( 10 ) which receives the pulsed laser light ( 2 ), and a detection part ( 17 ) for detecting an electromagnetic wave pulse ( 3 ) emitted from the application position ( 10 ) in response to the application of the pulsed laser light ( 2 ).
1. A semiconductor inspection apparatus for inspecting a semiconductor device, comprising:
a first irradiation part for applying pulsed laser light to a semiconductor device;
a second irradiation part for applying a reverse-biasing electromagnetic wave pulse for applying a reverse bias to an irradiation position which receives said pulsed laser light; and
a detection part for detecting an electromagnetic wave pulse emitted from said irradiation position in response to the irradiation of said pulsed laser light,
wherein said reverse-biasing electromagnetic wave pulse is a terahertz wave pulse.
2. The semiconductor inspection apparatus according to claim 1 , wherein said second irradiation part uses a light source identical with a light source for generating said pulsed laser light to generate said reverse-biasing electromagnetic wave pulse.
3. The semiconductor inspection apparatus according to claim 1 , wherein said second irradiation part irradiates said reverse-biasing electromagnetic wave pulse so that the direction of an electric field applied to said irradiation position by the irradiation of said reverse-biasing electromagnetic wave pulse is from an n-type semiconductor to a p-type semiconductor.
4. The semiconductor inspection apparatus according to claim 3 , further comprising a structure specifying part for specifying the structure of a semiconductor in said irradiation position.
5. The semiconductor inspection apparatus according to claim 1 , further comprising a scanning mechanism for moving the irradiation position of said pulsed laser light to thereby scan the semiconductor device two-dimensionally.
6. A method of inspecting a semiconductor device, comprising the steps of:
(a) irradiating pulsed laser light having a desired wavelength to a semiconductor device;
(b) irradiating a reverse-biasing electromagnetic wave pulse to apply a reverse bias to an irradiation position which receives said pulsed laser light in said step (a); and
(c) detecting an electromagnetic wave pulse emitted from said irradiation position in response to the application of said pulsed laser light,
wherein said reverse-biasing electromagnetic wave pulse is a terahertz wave pulse.