Magnetoresistive element and magnetic memory

1. A magnetoresistive element, comprising:

a first magnetic layer;

a second magnetic layer; and

a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,

at least one of the first magnetic layer and the second magnetic layer including a magnetic film of Mn x Al y Ge z (10 atm %≦x≦44 atm %, 10 atm %≦y≦65 atm %, 10 atm %≦z≦80 atm %, x+y+z=100 atm %).

2. The element according to claim 1 , wherein at least one of the first magnetic layer and the second magnetic layer has a single crystal structure.

3. The element according to claim 1 , wherein a third magnetic layer is inserted between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or the third magnetic layer is inserted between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer.

4. The element according to claim 3 , wherein the third magnetic layer contains at least one element selected from the group consisting of Mn, Al, and Ge.

5. The element according to claim 3 , wherein the third magnetic layer contains at least one element selected from the group consisting of Co, Fe, and Ni.

6. The element according to claim 1 , wherein the first nonmagnetic layer is formed of either an oxide containing at least one element selected from the group consisting of Mg, Ca, Ba, Al, Be, Sr, Zn, Ti, V, and Nb, or an oxide containing an element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba and at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb.

7. The element according to claim 1 , wherein the first magnetic layer is formed on a base layer, the base layer being one layer selected from the group consisting of:

a layer of nitride having a NaCl structure containing at least one element selected from the group consisting of Ti, Zr, Nb, V, Hf, Ta, Mo, W, B, Al, and Ce;

a layer of oxide containing one element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba, and at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb;

a layer of oxide having a NaCl structure containing at least one element selected from the group consisting of Mg, Al, and Ce; and

a layer containing at least one element selected from the group consisting of Al, Cr, Fe, Co, Rh, Pd, Ag, Ir, Pt, and Au, and having a (001) oriented tetragonal or cubic structure.

8. The element according to claim 1 , wherein:

each of the first and the second magnetic layers has an easy magnetization axis in a direction perpendicular to a film plane;

when a write current is caused to flow between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer, a direction of magnetization of the first magnetic layer is changeable, and a direction of magnetization of the second magnetic layer is fixed;

the magnetoresistive element further includes a fourth magnetic layer located on a side of the second magnetic layer opposite from the first nonmagnetic layer, and having an easy magnetization axis in a direction perpendicular to the film plane, a direction of magnetization of the fourth magnetic layer being antiparallel with a direction of magnetization of the second magnetic layer;

the magnetoresistive element further includes a second nonmagnetic layer located between the second magnetic layer and the fourth magnetic layer; and

the magnetoresistive element meets a relationship represented by an expression Ms 2 ×t 2 <Ms 4 ×t 4 , where a saturation magnetization of the second magnetic layer is Ms 2 , a thickness of the second magnetic layer is t 2 , a saturation magnetization of the fourth magnetic layer is Ms 4 , and a thickness of the fourth magnetic layer is t 4 .

9. The element according to claim 7 , wherein:

each of the first and the second magnetic layers has an easy magnetization axis in a direction perpendicular to a film plane;

when a write current is caused to flow between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer, a direction of magnetization of the first magnetic layer is fixed, and a direction of magnetization of the second magnetic layer is changeable;

the magnetoresistive element further includes a fourth magnetic layer located on a side of the base layer opposite from the first magnetic layer, and having an easy magnetization axis in a direction perpendicular to the film plane, a direction of magnetization of the fourth magnetic layer being antiparallel with a direction of magnetization of the first magnetic layer; and

the magnetoresistive element meets a relationship represented by an expression Ms 1 ×t 1 <Ms 4 ×t 4 , where a saturation magnetization of the first magnetic layer is Ms 1 , a thickness of the first magnetic layer is t 1 , a saturation magnetization of the fourth magnetic layer is Ms 4 , and a thickness of the fourth magnetic layer is t 4 .

10. The element according to claim 7 , wherein:

each of the first and the second magnetic layers has an easy magnetization axis in a direction perpendicular to a film plane;

when a write current is caused to flow between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer, a direction of magnetization of the first magnetic layer is changeable, and a direction of magnetization of the second magnetic layer is fixed;

the magnetoresistive element further includes a fourth magnetic layer located on a side of the base layer opposite from the first magnetic layer and having an easy magnetization axis in a direction perpendicular to the film plane, a direction of magnetization of the fourth magnetic layer being antiparallel with a direction of magnetization of the second magnetic layer; and

the magnetoresistive element meets a relationship represented by an expression Ms 2 ×t 2 <Ms 4 ×t 4 , where a saturation magnetization of the second magnetic layer is Ms 2 , a thickness of the second magnetic layer is t 2 , a saturation magnetization of the fourth magnetic layer is Ms 4 , and a thickness of the fourth magnetic layer is t 4 .

11. A magnetic memory comprising:

a magnetoresistive element according to claim 1 ;

a first wiring electrically connected to the first magnetic layer of the magnetoresistive element; and

a second wiring electrically connected to the second magnetic layer of the magnetoresistive element.

12. The memory according to claim 11 , wherein at least one of the first magnetic layer and the second magnetic layer has a single crystal structure.

13. The memory according to claim 11 , wherein a third magnetic layer is inserted between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or the third magnetic layer is inserted between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer.

14. The memory according to claim 13 , wherein the third magnetic layer contains at least one element selected from the group consisting of Mn, Al, and Ge.

15. The memory according to claim 13 , wherein the third magnetic layer contains at least one element selected from the group consisting of Co, Fe, and Ni.

16. The memory according to claim 11 , wherein the first nonmagnetic layer is formed of either an oxide containing at least one element selected from the group consisting of Mg, Ca, Ba, Al, Be, Sr, Zn, Ti, V, and Nb, or an oxide containing an element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba and at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb.

17. The memory according to claim 11 , wherein the first magnetic layer is formed on a base layer, the base layer being one layer selected from the group consisting of:

a layer of nitride having a NaCl structure containing at least one element selected from the group consisting of Ti, Zr, Nb, V, Hf, Ta, Mo, W, B, Al, and Ce;

a layer of oxide containing one element selected from the group consisting of Sr, Ce, Dy, La, K, Ca, Na, Pb, and Ba, and at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Nb, Mo, Ru, Ir, Ta, Ce, and Pb;

a layer of oxide having a NaCl structure containing at least one element selected from the group consisting of Mg, Al, and Ce; and

a layer containing at least one element selected from the group consisting of Al, Cr, Fe, Co, Rh, Pd, Ag, Ir, Pt, and Au, and having a (001) oriented tetragonal or cubic structure.

18. The memory according to claim 11 , wherein:

each of the first and the second magnetic layers has an easy magnetization axis in a direction perpendicular to a film plane;

when a write current is caused to flow between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer, a direction of magnetization of the first magnetic layer is changeable, and a direction of magnetization of the second magnetic layer is fixed;

the magnetoresistive element further includes a fourth magnetic layer located on a side of the second magnetic layer opposite from the first nonmagnetic layer, and having an easy magnetization axis in a direction perpendicular to the film plane, a direction of magnetization of the fourth magnetic layer being antiparallel with a direction of magnetization of the second magnetic layer;

the magnetoresistive element further includes a second nonmagnetic layer located between the second magnetic layer and the fourth magnetic layer; and

the magnetoresistive element meets a relationship represented by an expression Ms 2 ×t 2 <Ms 4 ×t 4 , where a saturation magnetization of the second magnetic layer is Ms 2 , a thickness of the second magnetic layer is t 2 , a saturation magnetization of the fourth magnetic layer is Ms 4 , and a thickness of the fourth magnetic layer is t 4 .

19. The memory according to claim 17 , wherein:

each of the first and the second magnetic layers has an easy magnetization axis in a direction perpendicular to a film plane;

when a write current is caused to flow between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer, a direction of magnetization of the first magnetic layer is fixed, and a direction of magnetization of the second magnetic layer is changeable;

the magnetoresistive element further includes a fourth magnetic layer located on a side of the base layer opposite from the first magnetic layer, and having an easy magnetization axis in a direction perpendicular to the film plane, a direction of magnetization of the fourth magnetic layer being antiparallel with a direction of magnetization of the first magnetic layer; and

the magnetoresistive element meets a relationship represented by an expression Ms 1 ×t 1 <Ms 4 ×t 4 , where a saturation magnetization of the first magnetic layer is Ms 1 , a thickness of the first magnetic layer is t 1 , a saturation magnetization of the fourth magnetic layer is Ms 4 , and a thickness of the fourth magnetic layer is t 4 .

20. The memory according to claim 17 , wherein:

each of the first and the second magnetic layers has an easy magnetization axis in a direction perpendicular to a film plane;

when a write current is caused to flow between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer, a direction of magnetization of the first magnetic layer is changeable, and a direction of magnetization of the second magnetic layer is fixed;

the magnetoresistive element further includes a fourth magnetic layer located on a side of the base layer opposite from the first magnetic layer and having an easy magnetization axis in a direction perpendicular to the film plane, a direction of magnetization of the fourth magnetic layer being antiparallel with a direction of magnetization of the second magnetic layer; and

the magnetoresistive element meets a relationship represented by an expression Ms 2 ×t 2 <Ms 4 ×t 4 , where a saturation magnetization of the second magnetic layer is Ms 2 , a thickness of the second magnetic layer is t 2 , a saturation magnetization of the fourth magnetic layer is Ms 4 , and a thickness of the fourth magnetic layer is t 4 .