Polycrystalline diamond compacts, method of fabricating same, and various applications
View Patent ↗Embodiments of the invention relate to a polycrystalline diamond compact. In an embodiment, the polycrystalline diamond compact includes a substrate and a polycrystalline diamond table including a first polycrystalline diamond layer bonded to the substrate and at least a second polycrystalline diamond layer. At least an un-leached portion of the polycrystalline diamond table includes a plurality of diamond grains defining a plurality of interstitial regions and a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oe or more and a specific magnetic saturation of about 15 G·cm 3 /g or less. The second polycrystalline diamond layer exhibits a second average diamond grain size that is less than a first average diamond grain size of the first polycrystalline diamond layer and/or the first polycrystalline diamond layer includes a tungsten-containing material therein.
1. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including a first polycrystalline diamond layer bonded to the substrate and at least a second polycrystalline diamond layer, at least an un-leached portion of the polycrystalline diamond table including:
a plurality of diamond grains defining a plurality of interstitial regions; and
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions;
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oe or more and a specific magnetic saturation of about 15 G·cm 3 /g or less; and
wherein at least one of the second polycrystalline diamond layer exhibits a second average diamond grain size that is less than a first average diamond grain size of the first polycrystalline diamond layer or the first polycrystalline diamond layer includes a tungsten-containing material therein.
2. The polycrystalline diamond compact of claim 1 wherein the second average diamond grain size is about 90% to about 98% of the first average diamond grain size.
3. The polycrystalline diamond compact of claim 1 wherein the second average diamond grain size is about 90% to about 95% of the first average diamond grain size.
4. The polycrystalline diamond compact of claim 1 wherein the tungsten-containing material comprises tungsten carbide that is present in the first polycrystalline diamond layer in an amount of about 15 weight % or less.
5. The polycrystalline diamond compact of claim 4 wherein the amount is about 1 weight % to about 10 weight %.
6. The polycrystalline diamond compact of claim 1 wherein the first polycrystalline diamond layer does not include the tungsten-containing material.
7. The polycrystalline diamond compact of claim 1 wherein the second average diamond grain size of the second polycrystalline diamond layer is less than the first average diamond grain size of the first polycrystalline diamond layer and the first polycrystalline diamond layer includes the tungsten-containing material therein.
8. The polycrystalline diamond compact of claim 1 wherein the second average diamond grain size is about 20 μm or less.
9. The polycrystalline diamond compact of claim 1 wherein the metal-solvent content is present in the at least the un-leached portion in an amount greater than 0 weight % to about 6 weight %.
10. The polycrystalline diamond compact of claim 9 wherein the amount is about 3 weight % to about 6 weight %.
11. The polycrystalline diamond compact of claim 1 wherein the substrate comprises an interfacial surface bonded to the first polycrystalline diamond layer, the interfacial surface including a plurality of protrusions, a ratio of a surface area of the interfacial surface in the absence of the plurality of protrusions to a surface area of the interfacial surface with the plurality of protrusions being about 0.650 to about 0.950.
12. The polycrystalline diamond compact of claim 1 wherein the coercivity is about 155 Oe to about 175 Oe, and wherein the specific magnetic saturation is about 10 G·cm 3 /g to about 15 G·cm 3 /g.
13. The polycrystalline diamond compact of claim 1 wherein the substrate comprises tungsten carbide, chromium carbide, or combinations thereof.
14. A rotary drill bit comprising a bit body including a leading end structure configured to facilitate drilling a subterranean formation, and a plurality of cutting elements mounted to the blades, at least one of the plurality of cutting elements configured as the polycrystalline diamond compact of claim 1 .
15. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including a first polycrystalline diamond layer bonded to the substrate and at least a second polycrystalline diamond layer, the second polycrystalline diamond layer exhibiting a second average diamond grain size that is less than a first average diamond grain size of the first polycrystalline diamond layer, at least an un-leached portion of the polycrystalline diamond table including:
a plurality of diamond grains defining a plurality of interstitial regions;
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions; and
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oe or more and a specific magnetic saturation of about 15 G·cm 3 /g or less.
16. The polycrystalline diamond compact of claim 15 wherein the second average diamond grain size is about 90% to about 98% of the first average diamond grain size.
17. The polycrystalline diamond compact of claim 15 wherein the second average diamond grain size is about 20 μm or less.
18. The polycrystalline diamond compact of claim 15 wherein the metal-solvent content is present in the at least the un-leached portion in an amount of about 3 weight % to about 6 weight %.
19. The polycrystalline diamond compact of claim 15 wherein the first polycrystalline diamond layer comprises a tungsten-containing material therein present in an amount of about 15 weight % or less.
20. The polycrystalline diamond compact of claim 15 wherein the substrate comprises an interfacial surface bonded to the first polycrystalline diamond layer, the interfacial surface including a plurality of protrusions, a ratio of a surface area of the interfacial surface in the absence of the plurality of protrusions to a surface area of the interfacial surface with the plurality of protrusions being about 0.650 to about 0.950.
21. The polycrystalline diamond compact of claim 15 wherein the substrate comprises tungsten carbide, chromium carbide, or combinations thereof.
22. A rotary drill bit comprising a bit body including a leading end structure configured to facilitate drilling a subterranean formation, and a plurality of cutting elements mounted to the blades, at least one of the plurality of cutting elements configured as the polycrystalline diamond compact of claim 15 .
23. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including a first polycrystalline diamond layer bonded to the substrate and at least a second polycrystalline diamond layer, the first polycrystalline diamond layer including a tungsten-containing material therein, at least an un-leached portion of the polycrystalline diamond table including:
a plurality of diamond grains defining a plurality of interstitial regions;
a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions; and
wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oe or more and a specific magnetic saturation of about 15 G·cm 3 /g or less.
24. The polycrystalline diamond compact of claim 23 wherein the tungsten-containing material comprises tungsten carbide that is present in the first polycrystalline diamond layer in an amount of about 15 weight % or less.
25. The polycrystalline diamond compact of claim 24 wherein the amount is about 1 weight % to about 10 weight %.
26. The polycrystalline diamond compact of claim 23 wherein the second polycrystalline diamond layer exhibits a second average grain size is less than a first average diamond grain size of the first polycrystalline diamond layer.
27. The polycrystalline diamond compact of claim 23 wherein the second average diamond grain size is about 20 μm or less.
28. The polycrystalline diamond compact of claim 23 wherein the metal-solvent content is present in the at least the un-leached portion in an amount of about 3 weight % to about 6 weight %.
29. The polycrystalline diamond compact of claim 23 wherein the substrate comprises an interfacial surface bonded to the first polycrystalline diamond layer, the interfacial surface including a plurality of protrusions, a ratio of a surface area of the interfacial surface in the absence of the plurality of protrusions to a surface area of the interfacial surface with the plurality of protrusions being about 0.650 to about 0.950.
30. The polycrystalline diamond compact of claim 23 wherein the substrate comprises tungsten carbide, chromium carbide, or combinations thereof.
31. A rotary drill bit comprising a bit body including a leading end structure configured to facilitate drilling a subterranean formation, and a plurality of cutting elements mounted to the blades, at least one of the plurality of cutting elements configured as the polycrystalline diamond compact of claim 23 .