High power semiconductor laser with phase-matching optical element
View Patent ↗A semiconductor laser that includes a single mode semiconductor laser coupled to a flared power amplifier is provided, the device including an internal or an external optical element that reinforces the curved wave front of the flared section of the device through phase-matching. By reinforcing the curved wave front via phase-matching, the device is less susceptible to thermal and gain-index coupled perturbations, even at high output powers, resulting in higher beam quality. Exemplary phase-matching optical elements include a grating integrated into the flared amplifier section; an intra-cavity, externally positioned binary optical element; and an intra-cavity, externally positioned cylindrically curved optical element.
1. A semiconductor laser, comprising:
a single mode (SM) semiconductor laser section;
a flared power amplifier section, wherein an SM output from said SM semiconductor laser section is injected into said flared power amplifier section, and wherein an output beam from said flared power amplifier section is comprised of a curved wave front; and
a curved grating integrated throughout said flared power amplifier section and configured to reinforce said curved wave front of said output beam of said flared power amplifier section, wherein said curved grating occupies an entire length of said flared power amplifier section, wherein a curvature corresponding to said curved grating matches a phase and a curvature corresponding to said curved wave front of said output beam of said flared power amplifier section.
2. The semiconductor laser of claim 1 , said SM semiconductor laser section further comprising a rear facet coated with a high reflectivity coating with a reflectivity of at least 90%.
3. The semiconductor laser of claim 1 , said flared power amplifier section further comprising a front facet coated with an anti-reflection (AR) coating.
4. The semiconductor laser of claim 1 , said flared power amplifier section further comprising a front facet, said front facet tilted at an angle θ away from a normal of the longitudinal axis of said semiconductor laser, wherein said angle θ is greater than or equal to a critical angle θ critical , wherein critical angle θ critical corresponds to the angle required to suppress reflections from said front facet into said flared power amplifier section.
5. The semiconductor laser of claim 4 , wherein said front facet is coated with an anti-reflection (AR) coating.
6. The semiconductor laser of claim 1 , further comprising an output coupler coated with a partially reflective broadband coating.
7. The semiconductor laser of claim 1 , further comprising an output coupler, said output coupler comprised of a wavelength selective surface grating.
8. The semiconductor laser of claim 1 , further comprising an output coupler, said output coupler comprised of a wavelength selective volume Bragg grating (VBG).
9. The semiconductor laser of claim 1 , wherein said SM semiconductor laser section is configured as a distributed feedback (DFB) laser.
10. The semiconductor laser of claim 1 , wherein said SM semiconductor laser section is configured as a distributed Bragg reflector (DBR) laser.
11. The semiconductor laser of claim 1 , wherein a width corresponding to said SM semiconductor laser section is between 3 μm and 7.5 μm, and wherein a length corresponding to said flared section is between 2 millimeters and 10 millimeters.
12. The semiconductor laser of claim 1 , said flared power amplifier section comprising an active region consisting of a quantum well gain media.
13. The semiconductor laser of claim 1 , said flared power amplifier section comprising an active region consisting of a quantum dot gain media.
14. The semiconductor laser of claim 1 , said flared power amplifier section comprising a current-injected region, a first Schottky contact comprised of a first titanium layer located on a first side of said current-injected region, and a second Schottky contact comprised of a second titanium layer located on a second side of said current-injected region.
15. The semiconductor laser of claim 14 , said first Schottky contact additionally located on a first side of said SM semiconductor laser section, and said second Schottky contact additionally located on a second side of said SM semiconductor laser section.