Thin film piezoelectric device
View Patent ↗A thin film piezoelectric device according to the present invention includes a pair of electrode layers and a piezoelectric thin film interposed between the pair of electrode layers, wherein the piezoelectric thin film contains a rare gas element and has a content gradient of the rare gas element in the thickness direction of the piezoelectric thin film.
1. A thin film piezoelectric device comprising a pair of electrode layers and a piezoelectric thin film interposed between the pair of electrode layers, wherein the piezoelectric thin film contains a rare gas element and has a content gradient of the rare gas element in the thickness direction of the piezoelectric thin film.
2. The thin film piezoelectric device according to claim 1 , wherein the piezoelectric thin film includes a plurality of layers and the content maximum of the rare gas element in the piezoelectric thin film lies in layers other than either of electrode layer-side interface layers of the piezoelectric thin film.
3. The thin film piezoelectric device according to claim 1 , wherein the piezoelectric thin film includes a plurality of layers and the content minimum of the rare gas element in the piezoelectric thin film lies in either of electrode layer-side interface layers of the piezoelectric thin film.
4. The thin film piezoelectric device according to claim 1 , wherein the piezoelectric thin film includes a plurality of layers and at least one of electrode layer-side interface layers does not contain the rare gas element.
5. The thin film piezoelectric device according to claim 1 , wherein the piezoelectric thin film is composed of a perovskite ferroelectric material.
6. The thin film piezoelectric device according to claim 1 , wherein the piezoelectric thin film is a potassium sodium niobate-based thin film.