Semiconductor thin-film forming method, semiconductor device, semiconductor device manufacturing method, substrate, and thin-film substrate

1. A semiconductor thin-film manufacturing method comprising:

forming an amorphous silicon film above a substrate, the amorphous silicon film having a photoluminescence (PL) intensity greater than or equal to 0.65 when photon energy is 1.1 eV in a PL spectrum normalized to have a maximum PL intensity of 1, the amorphous silicon film including pseudo-crystal nuclei with an average grain size of at most 1 nm, the amorphous silicon film further including a pseudo-crystal nucleus region in which a density of bonds between atoms having an amorphous structure is less than a density of bonds between atoms having a pseudo-crystal structure;

annealing the amorphous silicon film; and

inducing, during the annealing, crystallization by solid phase crystallization to form a crystalline silicon film.

2. The semiconductor thin-film manufacturing method according to claim 1 ,

wherein, in the forming, the PL intensity when the photon energy is 1.1 eV in the normalized PL spectrum is less than or equal to 0.8.

3. The semiconductor thin-film manufacturing method according to claim 1 ,

wherein, in the forming, the amorphous silicon film includes Si-Si bond regions as the pseudo-crystal nuclei, and

in the annealing, the annealing crystallizes the amorphous silicon film with the pseudo-crystal nuclei as nuclei, to form the crystalline silicon film.

4. The semiconductor thin-film manufacturing method according to claim 3 ,

wherein the average grain size of the pseudo-crystal nuclei is smaller than or equal to an average critical crystal nucleus size.

5. The semiconductor thin-film manufacturing method according to claim 1 ,

wherein the substrate is a glass substrate.

6. The semiconductor thin-film manufacturing method according to claim 5 ,

wherein the annealing is performed at a temperature lower than or equal to a melting point of glass.

7. The semiconductor thin-film manufacturing method according to claim 1 ,

wherein an average grain size of crystals in the crystalline silicon film is in a range from 30 nm to 300 nm.

8. The semiconductor thin-film manufacturing method according to claim 1 ,

wherein, in the forming, the amorphous silicon film is formed by plasma processing under a forming condition that plasma density is in a range from 0.1 W/cm 2 to 0.5 W/cm 2 .

9. The semiconductor thin-film manufacturing method according to claim 1 ,

wherein, in the forming, a crystal growth temperature of the amorphous silicon film is in a range from 350° C. to 500° C.

10. The semiconductor thin-film manufacturing method according to claim 1 ,

wherein, in the forming, the amorphous silicon film is formed using a source gas and an inert gas.

11. The semiconductor thin-film manufacturing method according to claim 10 ,

wherein, in the forming, the source gas includes any one of silane gas, disilane gas, and trisilane gas.

12. The semiconductor thin-film manufacturing method according to claim 10 ,

wherein, in the forming, the inert gas includes argon gas.

13. The semiconductor thin-film manufacturing method according to claim 1 , wherein the amorphous silicon film includes the pseudo-crystal nucleus region in which a density of bonds between atoms that are bonded in a diamond bond structure is greater than a density of bonds between atoms having the amorphous structure.

14. The semiconductor thin-film manufacturing method according to claim 1 ,

a number of the pseudo-crystal nucleus region produces a PL intensity greater than or equal to 0.65 and less than or equal to 0.8 when photon energy is 1.1 eV in a PL spectrum normalized to have a maximum PL intensity of 1.