Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
1. A heterojunction solar cell, comprising:
a metallurgical-grade Si (MG-Si) substrate that has undergone a process of metal-impurity leaching;
a layer of heavily doped epitaxial mono-crystalline-Si situated above the MG-Si substrate, wherein the heavily doped epitaxial mono-crystalline-Si layer is in direct contact with the MG-Si substrate, and wherein the heavily doped epitaxial mono-crystalline-Si layer acts as a back-surface field (BSF) layer;
a layer of lightly doped epitaxial mono-crystalline-Si situated above the heavily doped epitaxial mono-crystalline-Si layer, wherein the lightly doped epitaxial mono-crystalline-Si layer acts as a base layer;
a backside ohmic-contact layer situated on the backside of the MG-Si substrate;
a passivation layer situated above the heavily doped epitaxial mono-crystalline-Si BSF layer;
a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer;
a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer; and
a front ohmic-contact electrode situated above the TCO layer.
2. The heterojunction solar cell of claim 1 , wherein a doping type of the MG-Si substrate is the same as that of the heavily doped epitaxial mono-crystalline-Si BSF layer.
3. The heterojunction solar cell of claim 1 , wherein the metal-impurity leaching process is performed at a high temperature in an atmosphere of H 2 and HCl.
4. The heterojunction solar cell of claim 1 , wherein the heavily doped epitaxial mono-crystalline-Si BSF layer is deposited using a chemical-vapor-deposition (CVD) technique, wherein the thickness of the heavily doped epitaxial mono-crystalline-Si BSF layer is between 1 μm and 10 μm, and wherein the doping concentration for the heavily doped epitaxial mono-crystalline-Si BSF layer is between 1×10 17 /cm 3 and 1×10 20 /cm 3 .
5. The heterojunction solar cell of claim 1 , wherein the lightly doped epitaxial mono-crystalline-Si base layer is deposited using a CVD technique, wherein the thickness of the lightly doped epitaxial mono-crystalline-Si base layer is between 5 μm and 100 μm, and wherein the doping concentration for the lightly doped crystalline-Si base layer is between 1×10 16 /cm 3 and 1×10 17 /cm 3 .
6. The heterojunction solar cell of claim 1 , wherein the passivation layer includes at least one of: undoped a-Si and SiO x .
7. The heterojunction solar cell of claim 1 , wherein the heavily doped a-Si layer is deposited using a CVD technique, wherein the thickness of the heavily doped a-Si layer is between 1 nm and 50 nm, and wherein the doping concentration for the heavily doped a-Si layer is between 1×10 17 /cm 3 and 1×10 20 /cm 3 .
8. The heterojunction solar cell of claim 1 , wherein the heavily doped mono-crystalline-Si BSF layer and lightly doped mono-crystalline-Si base layer are p-type doped, and wherein the heavily doped a-Si layer is n-type doped.
9. The heterojunction solar cell of claim 1 , wherein the heavily doped mono-crystalline-Si BSF layer and lightly doped mono-crystalline-Si base layer are n-type doped, and wherein the heavily doped a-Si layer is p-type doped.
10. The heterojunction solar cell of claim 1 , wherein a thickness of the passivation layer is between 1 nm and 15 nm.