NANOSTRUCTURED TRANSPARENT CONDUCTING ELECTRODE
An optoelectronic device is disclosed. The optoelectronic device comprises an active layer and a conducting network layer which comprises a plurality of interconnected metal nanowires and a layer of transparent conducting material in electrical contact with the active layer. The conducting network layer of interconnected metal nanowires is disposed on the layer of transparent conducting material. Above the active layer, light passes through the transparent conducting material to reach the active layer. Each of the nanowires has an elongate, non-spherical configuration and aggregate nanowire length oriented to extend laterally through a plane of the conducting network layer. This provides lengthwise contact of the nanowires to the transparent conducting material.
1 . An optoelectronic device, comprising:
an active layer; and
a conducting network layer comprising a plurality of interconnected metal nanowires;
a layer of transparent conducting material in electrical contact with the active layer, wherein the conducting network layer of interconnected metal nanowires is disposed on the layer of transparent conducting material and above the active layer, wherein light passes through the transparent conducting material to reach the active layer;
wherein each of the nanowires has an elongate, non-spherical configuration, wherein aggregate nanowire length oriented to extend laterally through a plane of the conducting network layer to provide lengthwise contact of the nanowires to the transparent conducting material.
2 . The optoelectronic device of claim 1 wherein the nanowires are chosen from the group consisting of: aluminum, copper, gold, silver, and combinations thereof.
3 . The optoelectronic device of claim 1 wherein the layer of transparent conducting material includes one or more transparent conducting oxides.
4 . The optoelectronic device of claim 3 wherein one or more transparent conducting oxides are chosen from the group of consisting of: indium tin oxide (ITO), tin oxide, fluorinated tin oxide (F:SnO 2 ), zinc oxide, aluminum-doped zinc oxide, fluorine-doped In 2 O 3 , and gadolinium indium oxide.
5 . The optoelectronic device of claim 1 wherein the nanowires facilitate electrical conduction horizontally and laterally through a plane of the conducting network.
6 . The optoelectronic device of claim 1 wherein a nanostructured electrode comprised of the plurality of interconnected nanowires and the transparent conducting material has a resistivity of between about 10 −6 Ωcm and about 10 Ωcm.
7 . The optoelectronic device of claim 1 wherein a nanostructured electrode comprised of the plurality of interconnected nanowires and the transparent conducting material has a resistivity of between about 10 −6 Ωcm and about 1 Ωcm.
8 . The optoelectronic device of claim 1 wherein the nanowires conduct electrons substantially parallel to a plane the active layer.
9 . The optoelectronic device of claim 1 wherein the nanowires interconnect with nanowires columns that conduct electrons substantially perpendicular to a-plane of the active layer.
10 . The optoelectronic device of claim 1 wherein the nanowires are made from one or more of the following: a metal or an alloy of metals.
11 . The optoelectronic device of claim 1 wherein the resistivity of the layer of transparent conducting material is between about 10,000 Ωcm and about 1 Ωcm.
12 . The optoelectronic device of claim 1 wherein the resistivity of the layer of transparent conducting material is between about 1000 Ωcm and about 250 Ωcm
13 . The optoelectronic device of claim 1 wherein resistivity of the layer of transparent conducting material is greater than 250 Ωcm.
14 . An optoelectronic device, comprising:
a photovoltaic active layer;
a conducting network layer comprising a plurality of interconnected metal nanowires;
a layer of transparent conducting material in electrical contact with the active layer, wherein the conducting network layer of interconnected metal nanowires is disposed over the layer of transparent conducting material,
wherein resistivity of the layer of transparent conducting material is 250 Ωcm or greater;
wherein a nanostructured electrode comprised of the plurality of interconnected nanowires and the layer of transparent conducting material has a resistivity of between about 10 −6 Ωcm and about 1 Ωcm.