Light emitting device and light emitting device package having the same
Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode disposed in an opening portion of the light emitting structure and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, a second electrode disposed on the insulating layer and connected to the second conductive type semiconductor layer, a first electrode layer under the second electrode.
1. A light emitting device comprising:
a substrate;
a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;
an opening portion disposed in the light emitting structure;
a first electrode disposed in the opening portion and contacted with a portion of the first conductive type semiconductor layer;
an insulating layer covering the first electrode;
a second electrode on the insulating layer and connected to a portion of the second conductive type semiconductor layer; and
a first electrode layer between the second electrode and the second conductive type semiconductor layer,
wherein the first conductive type semiconductor layer includes a first sidewall and a second sidewall opposite to the first sidewall,
wherein the opening portion includes a first opening adjacent to the first sidewall and a second opening adjacent to the second sidewall,
wherein a width of the first opening is greater than a width of the second opening.
2. The light emitting device of claim 1 , wherein a portion of the second electrode is vertically overlapped with the first electrode.
3. The light emitting device of claim 1 , further comprising a second electrode layer on a top surface of the insulating layer.
4. The light emitting device claim 3 , wherein the second electrode layer is vertically overlapped with the first electrode.
5. The light emitting device of claim 4 , wherein the second electrode layer and the second electrode directly contact the top surface of the insulating layer.
6. The light emitting device of claim 1 , further comprising a second pad connected to the second electrode.
7. The light emitting device of claim 6 , wherein a portion of the first electrode layer is interposed between the second electrode and the second pad.
8. The light emitting device of claim 7 , wherein the second pad directly contacts with the second electrode, the first electrode layer, and the second conductive type semiconductor layer.
9. The light emitting device of claim 1 , further comprising a first pad on the first electrode.
10. The light emitting device of claim 8 , wherein the first electrode is embedded in the light emitting structure.
11. A light emitting device comprising:
a substrate;
a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;
an opening portion disposed in the light emitting structure;
a first electrode disposed in the opening portion and contacted with a portion of the first conductive type semiconductor layer;
an insulating layer covering the first electrode;
a second electrode on the insulating layer and connected to the second conductive type semiconductor layer; and
a first electrode layer including a reflective electrode layer between the second electrode and the second conductive type semiconductor layer,
wherein the first conductive type semiconductor layer includes a first sidewall and a second sidewall opposite to the first sidewall,
wherein the opening portion is disposed in the first conductive type semiconductor layer,
wherein the opening portion includes a first opening adjacent to the first sidewall and a second opening adjacent to the second sidewall,
wherein the second opening is extended more closely to the second sidewall than to the first sidewall toward a center direction of the first conductive type semiconductor layer.
12. The light emitting device of claim 11 , wherein a first portion of the second electrode is offset from the first electrode.
13. The light emitting device of claim 11 , wherein at least one of the first and second electrodes includes at least one of a straight-line pattern, a curved pattern, a mixture pattern of the straight-line pattern and the curved pattern, plural patterns branching from one pattern, a polygonal shape pattern, a lattice shape pattern, a dot shape pattern, a diamond shape pattern, a parallelogram shape pattern, a mesh shape pattern, a stripe shape pattern, a cross shape pattern, a star-shape pattern, a circular shape pattern, and a mixture pattern thereof.
14. The light emitting device of claim 11 , wherein the first and second electrodes are vertically overlapped with each other by at least 60%.
15. The light emitting device of claim 11 , further comprising a second electrode layer on a top surface of the insulating layer.
16. The light emitting device claim 15 , wherein the second electrode layer is vertically overlapped with the first electrode.
17. The light emitting device of claim 16 , wherein the second electrode layer and the second electrode directly contact the top surface of the insulating layer.
18. The light emitting device of claim 11 , further comprising a second pad connected to the second electrode.
19. The light emitting device of claim 18 , wherein a portion of the first electrode layer is interposed between the second electrode and the second pad.
20. A light emitting device package comprising:
a body;
a plurality of lead electrodes on the body;
a light emitting device electrically connected to the lead electrodes; and
a molding member covering the light emitting device,
wherein the light emitting device includes a substrate; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; an opening portion disposed in the light emitting structure; a first electrode disposed in the opening portion and contacted with a portion of the first conductive type semiconductor layer; an insulating layer covering the first electrode; a second electrode on the insulating layer and connected to a portion of the second conductive type semiconductor layer; and a first electrode layer between the second electrode and the second conductive type semiconductor layer,
wherein the first conductive type semiconductor layer includes a first sidewall and a second sidewall opposite to the first sidewall,
wherein the opening portion includes a first opening adjacent to the first sidewall and a second opening adjacent to the second sidewall,
wherein a width of the first opening is greater than a width of the second opening.