Conductive contact for solar cell
View Patent ↗Conductive contacts for solar cells and methods of forming conductive contacts for solar cells are described. For example, a solar cell includes a substrate. A conductive contact is disposed on the substrate. The conductive contact includes a layer composed of a first metal species having a plurality of pores. The conductive contact also includes a second metal species disposed in the plurality of pores. Portions of both the first and second metal species are in contact with the substrate.
1. A solar cell, comprising:
a substrate; and
a conductive contact disposed on the substrate, the conductive contact comprising:
a layer comprising a first metal species having a plurality of pores, and a second metal species disposed in the plurality of pores, wherein portions of both the first and second metal species are in contact with the substrate,
wherein the first metal species in aluminum (Al) and the second metal species is nickel (Ni),
wherein a concentration of the second metal species is graded higher in concentration distal from the substrate and lower in concentration proximate to the substrate,
wherein the aluminum is included as a plurality of aluminum/silicon (Al/Si) alloy particles,
wherein a majority of the Al/Si alloy particles has a diameter approximately in the range of 1-5 microns, and a majority of the pores has a diameter approximately in the range of 0.1-1 microns.
2. The solar cell of claim 1 , wherein the substrate is a bulk silicon substrate, and wherein a portion of the second metal species forms a silicide with a portion of the bulk silicon substrate.
3. The solar cell of claim 1 , further comprising:
a second layer substantially comprising a third metal species disposed above the layer comprising the first metal species and the second metal species.
4. The solar cell of claim 3 , wherein the third metal species is copper (Cu).
5. The solar cell of claim 3 , further comprising:
a third layer substantially comprising the second metal species, but not the first or second metal species, the third layer disposed between the second layer and the layer comprising the first metal species and the second metal species.
6. The solar cell of claim 1 , wherein the conductive contact is a back-contact.
7. A solar cell, comprising:
a silicon substrate; and
a conductive contact disposed on the silicon substrate, the conductive contact comprising:
a first conductive layer comprising aluminum (Al) containing particles having a plurality of pores, and nickel (Ni) disposed in the plurality of pores, wherein portions of both the Al containing particles and the Ni are in contact with the substrate,
wherein a concentration of the Ni is graded higher in concentration distal from the silicon substrate and lower in concentration proximate to the silicon substrate,
wherein the Al containing particles are aluminum/silicon (Al/Si) alloy particles,
wherein a majority of the Al/Si alloy particles has a diameter approximately in the range of 1-5 microns, and a majority of the pores has a diameter approximately in the range of 0.1-1 microns.
8. The solar cell of claim 7 , wherein a portion of the Ni forms a silicide with a portion of the silicon substrate.
9. The solar cell of claim 7 , further comprising:
a second conductive layer substantially comprising copper (Cu) disposed above the first conductive layer; and
a third conductive layer substantially comprising Ni, but not Al or Cu, the third conductive layer disposed between the second conductive layer and the first conductive layer.
10. A back-contact solar cell, comprising:
a bulk N-type silicon substrate; and
a conductive contact disposed on a surface of the bulk N-type silicon substrate opposing a light receiving surface of the bulk N-type silicon substrate, the conductive contact comprising:
a first conductive layer comprising aluminum/silicon (Al/Si) alloy particles having a plurality of pores, and nickel (Ni) disposed in the plurality of pores, wherein portions of both the aluminum/silicon (Al/Si) alloy particles and the Ni are in contact with the bulk N-type silicon substrate, and wherein a portion of the Ni forms a silicide with a portion of the bulk N-type silicon substrate;
a second conductive layer substantially comprising Ni, but not Al or Cu, the second conductive layer disposed on the first conductive layer; and
a third conductive layer substantially comprising copper (Cu) disposed on the second conductive layer;
wherein a concentration of the Ni is graded higher in concentration distal from the bulk N-type silicon substrate and lower in concentration proximate to the bulk N-type silicon substrate;
wherein a majority of the Al/Si alloy particles has a diameter approximately in the range of 1-5 microns, and a majority of the pores has a diameter approximately in the range of 0.1-1 microns.