Photoelectrochemical cell including Ga(Sb
The composition of matter comprising Ga(Sb x )N 1−x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
1. A photoelectric cell, comprising:
an electrolyte vessel;
an electrolyte held in said vessel;
a first semiconductor electrode in contact with said electrolyte, said first semiconductor electrode including a substrate with a first face and a first semiconductor layer of Ga(Sb x )N 1−x where x=0.01 to 0.06 having a band gap between 2.4 and 1.7 eV in contact with the first face of the substrate; and
a counter electrode in contact with said electrolyte.
2. The cell of claim 1 wherein at least a portion of said electrolyte vessel allows sunlight to impinge on said semiconductor electrode.
3. The cell of claim 1 wherein said electrolyte is water and sunlight drives an electrolysis reaction wherein O 2 is liberated at said semiconductor electrode and H 2 is liberated at said counter electrode.
4. The cell of claim 2 , wherein said counter electrode is made from platinum.
5. The cell of claim 2 , wherein said counter electrode is a second semiconductor electrode including a second semiconductor layer of Ga(Sb x )N 1−x where x=0.01 to 0.06 having a band gap between 2.4 and 1.7 eV wherein said second semiconductor layer includes a p-type dopant.
6. The cell of claim 1 , where x=from 0.01 −0.02.
7. The cell of claim 1 , where x=from 0.02 −0.03.
8. The cell of claim 1 , where x=from 0.03 −0.04.
9. The cell of claim 1 , where x=from 0.04 −0.06.
10. The cell of claim 1 , wherein the first semiconductor layer has a thickness of about 100 nm to about 500 nm.
11. The cell of claim 1 , wherein the first semiconductor layer includes a p-type dopant.
12. The cell of claim 11 , wherein said p-type dopant is magnesium.
13. The cell of claim 11 , wherein the first semiconductor layer includes a n-type dopant.
14. The cell of claim 1 , further including an electrocatalyst coating on a face of the first semiconductor layer.
15. The cell of claim 14 , wherein said electrocatalyst coating is selected from a group of materials consisting of platinum, RuO 2 and mixtures thereof.
16. The cell of claim 1 , wherein the substrate is a conductive substrate.
17. The cell of claim 16 , wherein said conductive substrate is a nanowire array made from a material selected from a group consisting of silicon, GaN, InN and mixtures thereof supported on a support substrate.
18. The cell of claim 17 , wherein said support substrate is made from a material selected from a group consisting of stainless steel and FTO covered glass.
19. The cell of claim 1 , wherein said substrate is a single crystal substrate.
20. The cell of claim 18 , wherein said single crystal substrate is made from a material selected from a group consisting of silicone, GaN grown silicon, GaN covered sapphire substrate, silicon carbide, sapphire.
21. The cell of claim 1 , further comprising a wire connected to the substrate.
22. The cell of claim 21 , wherein the wire is a nanowire array.
23. A photoelectric cell, comprising:
an electrolyte vessel;
an electrolyte held in said vessel;
a first semiconductor electrode in contact with said electrolyte, said first semiconductor electrode consisting essentially of a substrate with a first face and a first semiconductor layer of Ga(Sb x )N 1−x where x=0.01 to 0.06 having a band gap between 2.4 and 1.7 eV in contact with the first face of the substrate; and
a counter electrode in contact with said electrolyte.