LASER SYSTEM WITH POLARIZED OBLIQUE INCIDENCE ANGLE AND ASSOCIATED METHODS
Novel laser processed semiconductor materials, systems, and methods associated with the manufacture and use of such materials are provided. In one aspect, for example, a method of processing a semiconductor material can include providing a semiconductor material and irradiating a target region of the semiconductor material with a beam of laser radiation to form a laser treated region. The laser radiation is irradiated at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°, and the laser radiation can be at least substantially p-polarized.
1 . A method of processing a semiconductor material, comprising:
providing a semiconductor material;
irradiating a target region of the semiconductor material with a beam of laser radiation to form a laser treated region, wherein the laser radiation is irradiated at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°, and wherein the laser radiation is substantially p-polarized.
2 . The method of claim 1 , wherein the angle of incidence is from about 20° to about 85°.
3 . The method of claim 1 , wherein the angle of incidence is from about 40° to about 85°.
4 . The method of claim 1 , wherein the angle of incidence is within about ±15° of the Brewster's angle for the semiconductor material.
5 . The method of claim 1 , wherein the angle of incidence is within about ±5° of the Brewster's angle for the semiconductor material.
6 . The method of claim 1 , wherein irradiating the target region forms surface features on the semiconductor material.
7 . The method of claim 6 , wherein the surface features have a height of from about 1 nm to about 3 microns.
8 . The method of claim 6 , wherein the surface features have a height of from about 100 nm to about 1 micron.
9 . The method of claim 6 , wherein the surface features are formed using laser pulses having a duration of from about 1 femtosecond to about 500 picoseconds.
10 . The method of claim 1 , wherein the laser treated region is heat annealed subsequent to irradiating with the laser radiation.
11 . A light enhanced semiconductor material, comprising:
a semiconductor material;
a laser treated region on a surface of the semiconductor material, the laser treated region having surface features oriented at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°.
12 . The material of claim 11 , wherein substantially all of the surface features are oriented at an angle of incidence relative to the semiconductor material surface normal.
13 . The material of claim 12 , wherein the angles of incidence for substantially all of the surface features are within about 30° of each other.
14 . The material of claim 12 , wherein the angles of incidence for substantially all of the surface features are within about 15° of each other.
15 . The material of claim 11 , wherein the angle of incidence is from about 20° to about 85°.
16 . The material of claim 11 , wherein the angle of incidence is within about ±15° of the Brewster's angle for the semiconductor material.
17 . The material of claim 11 , wherein the angle of incidence is within about ±5° of the Brewster's angle for the semiconductor material.
18 . The material of claim 11 , wherein the semiconductor material is comprised of silicon.
19 . The material of claim 11 , wherein the semiconductor material is selected from the group consisting of group III-V, group II-VI, and group I-III-VI.
20 . The material of claim 11 , wherein the surface features have a height of from about 1 nm to about 3 microns.
21 . The material of claim 11 , wherein the surface features have a height of from about 100 nm to about 1 micron.