Trench formation method for releasing a substrate from a semiconductor template
A method is provided for fabricating a semiconductor substrate by forming a porous semiconductor layer conformally on a semiconductor template and then forming a semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the semiconductor substrate is formed on the semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the semiconductor substrate and is positioned between the inner trench and the edge of the semiconductor substrate. The semiconductor substrate is then released from the semiconductor template.
1. A method for fabrication of a semiconductor substrate, the method comprising:
forming a porous semiconductor layer on a semiconductor template, said porous semiconductor layer conformal to said semiconductor template;
forming a semiconductor substrate on said porous semiconductor layer, said semiconductor substrate conformal to said porous semiconductor layer and having an exposed surface opposite said porous semiconductor layer;
forming an inner trench in said exposed surface of semiconductor substrate having a depth less than a thickness of said semiconductor substrate;
forming an outer trench through said exposed surface of semiconductor substrate providing access to said porous semiconductor layer and positioned between said inner trench and an edge of said semiconductor substrate;
releasing said semiconductor substrate from said semiconductor template; and
forming the edge of said released semiconductor substrate along said inner trench.
2. The method of claim 1 , wherein said semiconductor substrate is a silicon semiconductor substrate.
3. The method of claim 1 , wherein said porous semiconductor layer is a porous silicon layer.
4. The method of claim 1 , wherein said semiconductor template is a silicon template made of a silicon wafer.
5. The method of claim 1 , wherein said semiconductor substrate is substantially planar.
6. The method of claim 1 , wherein said semiconductor substrate is three-dimensional.
7. The method of claim 1 , wherein said inner trench is aligned along a crystallographic direction of said semiconductor substrate.
8. The method of claim 1 , further comprising the step of dividing the released semiconductor substrate at said inner trench.
9. The method of claim 1 , further comprising the step of breaking the released semiconductor substrate at said inner trench according to a mechanical snapping method using said first trench as a cleaving line.
10. The method of claim 1 , wherein said first trench is created according to a laser cutting process.
11. The method of claim 1 , wherein said outer trench is created according to a laser cutting process.
12. The method of claim 1 , wherein said inner trench is created according to a mechanical scribing process.
13. The method of claim 1 , wherein said outer trench is created according to a mechanical scribing process.
14. The method of claim 1 , wherein said inner trench is created according to a semiconductor reactive ion etching (RIE) etching process.
15. The method of claim 1 , wherein said outer trench is created according to a semiconductor reactive ion etching (RIE) etching process.
16. The method of claim 1 , wherein said outer trench is located at an edge of said semiconductor template and is formed according to a mechanical lapping, grinding, or polishing process.
17. The method of claim 1 , wherein said inner trench is created according to an anisotropic semiconductor wet etching process.
18. The method of claim 1 , wherein said outer trench is created according to an anisotropic semiconductor wet etching process.
19. The method of claim 1 , wherein said inner trench is created according to an anodic semiconductor etching process.
20. The method of claim 1 , wherein said outer trench is created according to an anodic semiconductor etching process.