Polycrystalline-type solar cell panel and process for production thereof
View Patent ↗Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
1. A method of manufacturing a polycrystalline solar cell panel, comprising:
step A of preparing a P-type or N-type silicon target;
step B of forming a P-type or N-type amorphous silicon film on the surface of a substrate using the P-type or N-type silicon target through sputtering; and
step C of scanning the P-type or N-type amorphous silicon film with plasma to melt the P-type or N-type amorphous silicon film and then re-crystallizing the melted P-type or N-type amorphous silicon film to form a P-type or N-type polycrystalline silicon film,
the step A including obtaining a P-type silicon target through a step of pulverizing a P-type silicon ingot containing boron and having a purity of 99.999 wt % or more to form P-type silicon powder having a purity of 99.999 wt % or more, a step of exposing the P-type silicon powder to plasma to form P-type molten silicon, and a step of re-crystallizing the P-type molten silicon, or
the step A including obtaining an N-type silicon target through a step of pulverizing an N-type silicon ingot containing phosphorus or arsenic and having a purity of 99.999 wt % or more to form N-type silicon powder having a purity of 99.999 wt % or more, a step of exposing the N-type silicon powder to plasma to form N-type molten silicon, and a step of re-crystallizing the N-type molten silicon.
2. The method of manufacturing a polycrystalline solar cell panel according to claim 1 , wherein the step of pulverizing the P-type silicon ingot or the N-type silicon ingot includes a step of forming P-type silicon powder with a particle diameter of 0.1 μm to 100 μm using at least one method selected from high-pressure pure water cutting, jet milling, wet atomization, ultrasonic disintegration, and shock wave disintegration.
3. The method of manufacturing a polycrystalline solar cell panel according to claim 1 , wherein the substrate contains any one of Al, Ag, Cu, Sn, Zn, In, and Fe.
4. The method of manufacturing a polycrystalline solar cell panel according to claim 1 , wherein the plasma is atmospheric-pressure plasma.
5. The method of manufacturing a polycrystalline solar cell panel according to claim 1 , wherein the scanning speed is in the range of 100 mm/sec to 2000 mm/sec.
6. The method of manufacturing a polycrystalline solar cell panel according to claim 1 , further comprising step D of exposing the P-type polycrystalline silicon film formed in step C to plasma under a gas containing arsenic or phosphorus to form an PN junction or exposing the N-type polycrystalline silicon film formed in step C to plasma under a gas containing boron to form a PN junction.
7. A method of manufacturing a polycrystalline solar cell panel, comprising:
step α of preparing a P-type silicon target and an N-type silicon target;
step β of forming an amorphous laminated film of a P-type amorphous silicon film and an N-type amorphous silicon film on the surface of a substrate using the P-type silicon target and the N-type silicon target through sputtering; and
step γ of scanning the laminated film with plasma to melt the laminated film and then re-crystallizing the melted laminated film to form a polycrystalline laminated film of a P-type polycrystalline silicon film and an N-type polycrystalline silicon film.
8. The method of manufacturing a polycrystalline solar cell panel according to claim 7 , wherein step α includes:
obtaining a P-type silicon target through a step of pulverizing a P-type silicon ingot containing boron and having a purity of 99.999 wt % or more to form P-type silicon powder having a purity of 99.999 wt % or more, a step of exposing the P-type silicon powder to plasma to form P-type molten silicon, and a step of re-crystallizing the P-type molten silicon; and
obtaining an N-type silicon target through a step of pulverizing an N-type silicon ingot containing phosphorus or arsenic and having a purity of 99.999 wt % or more to form N-type silicon powder having a purity of 99.999 wt % or more, a step of exposing the N-type silicon powder to plasma to form N-type molten silicon, and a step of re-crystallizing the N-type molten silicon.
9. The method of manufacturing a polycrystalline solar cell panel according to claim 8 , wherein the step of pulverizing the P-type silicon ingot and the N-type silicon ingot includes a step of forming P-type silicon powder with a particle diameter of 0.1 μm to 100 μm using at least one method selected from high-pressure pure water cutting, jet milling, wet atomization, ultrasonic disintegration, and shock wave disintegration.
10. The method of manufacturing a polycrystalline solar cell panel according to claim 7 , wherein the substrate contains any one of Al, Ag, Cu, Sn, Zn, In, and Fe.
11. The method of manufacturing a polycrystalline solar cell panel according to claim 7 , wherein the plasma is atmospheric-pressure plasma.
12. The method of manufacturing a polycrystalline solar cell panel according to claim 7 , wherein the scanning speed is in the range of 100 mm/sec to 2000 mm/sec.
13. The method of manufacturing a polycrystalline solar cell panel according to claim 7 , wherein step γ includes forming a PN junction in the polycrystalline laminated film.
14. A polycrystalline solar cell panel formed using the method according to claim 13 .