IP Library Granted Patent US 9,337,397
Granted Patent B2
US 9,337,397 · App. 13/636,048 · Granted May 10, 2016

Radiation-emitting semiconductor device

Inventor: Michael Wittmann (Alteglofsheim, DE)
Assignee: OSRAM Opto Semiconductors GmbH
H01L33/50H01L33/56H01L25/0753H01L33/54H01L2224/48097
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Quick Facts
Patent No.
US 9,337,397
App. No.
13/636,048
Granted
May 10, 2016
Kind
B2
Abstract

A radiation-emitting semiconductor device includes a chip connection region, a radiation-emitting semiconductor chip, and a light-absorbing material, wherein the radiation-emitting semiconductor chip is fixed to the chip connection region, the chip connection region is covered with the light-absorbing material at selected locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip, and the radiation-emitting semiconductor chip is free of the light-absorbing material in locations.

Claims (39)

1. A radiation-emitting semiconductor device comprising:

a housing body having a chip mounting area;

a chip connection region;

a radiation-emitting semiconductor chip;

a wire connection region;

a wire electrically conductively connecting the wire connection region to the radiation-emitting semiconductor chip; and

a light-absorbing material,

wherein

the chip connection region and the wire connection region are arranged at the chip mounting area,

the radiation-emitting semiconductor chip is fixed to the chip connection region,

the chip connection region is covered with the light-absorbing material at selected locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip,

the wire connection region is covered with the light-absorbing material at selected locations at which it is not covered by the wire,

the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations,

the chip mounting area is free of the light-absorbing material in selected locations, and

the housing body and the light-absorbing material are the same color.

2. The radiation-emitting semiconductor device according to claim 1 , wherein the chip mounting area is formed with the same color as, or in a similar color to, the light absorbing material.

3. The radiation-emitting semiconductor device according to claim 1 , further comprising a light-transmissive potting material, wherein

the potting material is substantially free of the light-absorbing material, and

the potting material adjoins the radiation-emitting semiconductor chip and the light-absorbing material in selected locations.

4. The radiation-emitting semiconductor device according to claim 3 , wherein the potting material adjoins the chip mounting area in selected locations.

5. The radiation-emitting semiconductor device according to claim 3 , wherein the potting material is transparent.

6. The radiation-emitting semiconductor device according to claim 3 , wherein the potting material is filled with a phosphor and/or a diffuser.

7. The radiation-emitting semiconductor device according to claim 3 , wherein the chip connection region and/or the wire connection region are formed with a metal.

8. The radiation-emitting semiconductor device according to claim 7 , wherein the light-absorbing material inhibits migration and/or oxidation and/or corrosion of the metal.

9. The radiation-emitting semiconductor device according to claim 1 , wherein the light-absorbing material is applied by a jet process.

10. The radiation-emitting semiconductor device according to claim 1 , wherein the light-absorbing material comprises a silicone into which light-absorbing particles are introduced.

11. Display apparatus, wherein at least one pixel of the display apparatus is formed at least partly by a radiation-emitting semiconductor device according to claim 1 .

12. A radiation-emitting semiconductor device comprising:

a chip connection region;

a radiation-emitting semiconductor chip;

a housing body having a chip mounting area; and

a light-absorbing material,

wherein

the radiation-emitting semiconductor chip is fixed to the chip connection region,

the chip connection region is covered with the light-absorbing material at locations at which said chip connection region is not covered by the radiation-emitting semiconductor chip,

the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations,

the chip connection region and/or a wire connection region are arranged at the chip mounting area,

the chip mounting area is free of the light-absorbing material in selected locations, and

the chip mounting area is formed with the same color as, or in a similar color to, the light absorbing material.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2012
From: WITTMANN, MICHAEL
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 029301/0212 →
Priority Claims (1)
DE 10 2010 012 602 · Mar 24, 2010 · national
Continuity (1)
Related Publication 20130099266A1 · Apr 25, 2013