Optoelectronic component and method for producing an optoelectronic component and a compound structure
View Patent ↗An optoelectronic component includes a housing. At least one semiconductor chip is arranged in the housing. The semiconductor chip includes an active layer suitable for producing or detecting electromagnetic radiation. A casting compound at least partially surrounds the semiconductor chip. Reflective particles are embedded in the casting compound.
1. An optoelectronic component comprising:
a housing;
a semiconductor chip arranged in the housing, the semiconductor chip comprising an active layer suitable for generating or detecting electromagnetic radiation;
a casting compound, wherein the casting compound at least partially encloses the semiconductor chip and wherein reflective particles are embedded in the casting compound; and
a cover layer arranged on the casting compound, wherein a thermal expansion coefficient is increased stepwise from the housing to the casting compound to the cover layer.
2. The optoelectronic component according to claim 1 , wherein the housing comprises a cavity on a base surface on which a lead frame is arranged, the semiconductor chip being arranged on the lead frame, and wherein the casting compound is introduced into the cavity.
3. The optoelectronic component according to claim 2 , wherein the cover layer directly adjoins the casting compound.
4. The optoelectronic component according to claim 1 , wherein a conversion material is embedded in the cover layer.
5. The optoelectronic component according to claim 1 , wherein the cover layer is formed as a lens.
6. The optoelectronic component according to claim 1 , wherein the semiconductor chip protrudes from the casting compound in a vertical direction and wherein the semiconductor chip protrudes in the vertical direction into the cover layer.
7. The optoelectronic component according to claim 1 , wherein the cover layer and the casting compound contain silicone or a hybrid material.
8. The optoelectronic component according to claim 1 , wherein the semiconductor chip protrudes from the casting compound in a vertical direction.
9. The optoelectronic component according to claim 1 , wherein the housing contains polyphthalamide or epoxide.
10. The optoelectronic component according to claim 1 , wherein
the semiconductor chip protrudes from the casting compound in a vertical direction,
the casting compound directly adjoins side surfaces of the semiconductor chip,
the cover layer directly adjoins the casting compound,
the semiconductor chip protrudes in the vertical direction into the cover layer and is in direct contact with the cover layer, and
a material of the housing is an epoxide and has a thermal expansion coefficient from 1 to 18 ppm, while the cover layer has a thermal expansion coefficient of 150 to 300 ppm.
11. The optoelectronic component according to claim 1 , wherein a material of the housing is an epoxide and has a thermal expansion coefficient from 1 to 18 ppm.
12. The optoelectronic component according to claim 11 , wherein the cover layer has a thermal expansion coefficient of 150 to 300 ppm.
13. The optoelectronic component according to claim 1 , wherein the cover layer has a thermal expansion coefficient of 150 to 300 ppm.
14. A method for producing an optoelectronic component, the method comprising:
disposing a semiconductor chip in a housing, the semiconductor chip comprising an active layer suitable for generating or detecting electromagnetic radiation;
forming a casting compound at least partially enclosing the semiconductor chip, wherein reflective particles are embedded in the casting compound; and
applying a cover layer onto the casting compound, wherein a thermal expansion coefficient is increased stepwise from the housing to the casting compound to the cover layer.
15. The method according to claim 14 , further comprising producing the housing an injection pressing or injection molding method.
16. The method according to claim 15 , wherein the housing is shaped using a tool by at least partially curing the housing in the tool, the tool comprising a closed shape.
17. The method according to claim 14 , wherein the casting compound is introduced into the housing in such a way that the semiconductor chip protrudes beyond the casting compound in a vertical direction.
18. The method according to claim 17 , wherein the semiconductor chip protrudes through the cover layer.
19. A method for producing a structure with a plurality of components, the method comprising:
providing a housing with a plurality of cavities;
disposing a semiconductor chip within each of the cavities, each semiconductor chip comprising an active layer suitable for generating or detecting electromagnetic radiation;
introducing a casting compound into the cavities to at least partially enclose the semiconductor chips, the casting compound comprising reflective particles;
applying a cover layer onto the casting compound, wherein a thermal expansion coefficient is increased stepwise from the housing to the casting compound to the cover layer; and
after introducing the casting compound, separating the housing into individual components, in such a way that each separate component comprises a semiconductor chip.
20. The method according to claim 19 , wherein each separate component comprises exactly one semiconductor chip.