IP Library Granted Patent US 9,296,066
Granted Patent B2
US 9,296,066 · App. 13/640,140 · Granted Mar 29, 2016

Method of material processing by laser filamentation

Inventors: S. Abbas Hosseini (Richmond Hill, CA); Peter R. Herman (Toronto, CA)
Assignee: ROFIN-SINAR TECHNOLOGIES INC.
B23K26/0057B23K26/0006B23K26/0604B23K26/0619B23K26/0624B26F3/00C03B33/0222H01L21/2633B23K2203/50Y10T225/12
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Quick Facts
Patent No.
US 9,296,066
App. No.
13/640,140
Granted
Mar 29, 2016
Kind
B2
Abstract

A method is provided for the internal processing of a transparent substrate in preparation for a cleaving step. The substrate is irradiated with a focused laser beam that includes pulses having an energy and pulse duration selected to produce a filament within the substrate. The substrate is translated relative to the laser beam to irradiate the substrate and produce an additional filament at one or more additional locations. The resulting filaments form an array defining an internally scribed path for cleaving the substrate. Laser beam parameters may be varied to adjust the filament length and position, and to optionally introduce V-channels or grooves. The laser pulses may be delivered in a burst train for lowering the energy threshold for filament formation, increasing filament length, thermally annealing of the filament modification zone to minimize collateral damage, and increasing the processing speed compared with the use of low repetition rate lasers.

Claims (38)

1. A method of preparing a substrate for cleavage, the method comprising the steps of:

irradiating the substrate with a burst of pulses of a focused laser beam, wherein the substrate is transparent to the focused laser beam, wherein a time delay between successive pulses in the burst of pulses is less than a time duration over which relaxation of one or more material modification dynamics occurs, and wherein the burst of pulses have an energy and pulse duration selected to produce a filament within the substrate;

translating the substrate relative to the focused laser beam to irradiate the substrate and produce an additional filament at one or more additional locations;

wherein the filaments form an array defining an internally scribed path for cleaving the substrate;

wherein each burst of pulses is focused to provide a sufficient beam intensity within the substrate to cause self-focusing of the focused laser beam over an extended laser interaction focal volume, thereby producing a plasma channel while avoiding optical breakdown, such that substantially uniform modification of the material occurs along the beam path, thereby forming a single continuous filament within the substrate; and

wherein each single continuous filament is formed with a sufficient length to facilitate cleavage of the substrate without requiring repeat passes of the laser over the same region.

2. The method according to claim 1 wherein the substrate is translated relative to the focused laser beam with a rate selected to produce a filament spacing on a micron scale.

3. The method according to claim 1 wherein the burst of pulses are provided two or more times with a prescribed frequency, and wherein the substrate is translated relative to the focused laser beam with a constant rate.

4. The method according to claim 1 wherein a location of a beam focus of the focused laser beam is selected to generate the filaments within the substrate, wherein at least one surface of the substrate is free from ablation.

5. The method according to claim 1 wherein a location of a beam focus of the focused laser beam is selected to generate a V groove within at least one surface of the substrate.

6. The method according to claim 1 wherein the substrate is a glass.

7. The method according to claim 1 wherein the substrate includes a semiconductor.

8. The method according to claim 1 wherein the substrate is selected from the group consisting of transparent ceramics, polymers, transparent conductors, wide bandgap glasses, crystals, crystal quartz, diamond, and sapphire.

9. The method according to claim 1 wherein the substrate includes a first layer and one or more additional layers, and wherein a location of a beam focus of the focused laser beam is selected to generate filaments within at least one of the one or more additional layers.

10. The method according to claim 9 wherein the substrate includes multi-layer flat panel display glass.

11. The method according to claim 10 wherein the flat panel display glass is selected from the group consisting of liquid crystal display (LCD), flat panel display (FPD), and organic light emitting display (OLED).

12. The method according to claim 9 wherein the substrate is selected from the group consisting of auto glass, tubing, windows, biochips, optical sensors, planar lightwave circuits, optical fibers, drinking glass ware, art glass, silicon, III-V semiconductors, microelectronic chips, memory chips, sensor chips, light emitting diodes (LED), laser diodes (LD), and vertical cavity surface emitting laser (VCSEL).

13. The method according to claim 9 , wherein the location of the beam focus of the focused laser beam is selected to generate filaments within two or more layers, wherein the focused laser beam generates a first filament in one layer, propagates into at least one of the one or more additional layers, and generates a second filament in the at least one of the one or more additional layers.

14. The method according to claim 1 further comprising the step of cleaving the substrate.

15. The method according to claim 1 wherein a pulse duration of each pulse is less than about 100 ps.

16. The method according to claim 1 wherein a pulse duration of each pulse is less than about 10 ps.

17. The method according to claim 9 wherein the location of the beam focus of the focused laser beam is first selected to generate filaments within the first layer, the method further comprising the steps of:

positioning a second beam focus within a second layer, wherein the second layer is one of the one or more additional layers; and

irradiating the second layer and translating the substrate to produce a second array of filaments defining a second internally scribed path for cleaving the substrate.

18. The method according to claim 17 wherein when irradiating the second layer, the substrate is irradiated from an opposite side relative to when irradiating the first layer.

19. The method according to claim 17 wherein prior to irradiating the second layer, a position of the second beam focus is laterally translated to produce an offset relative to a first position of a first beam focus when irradiating the first layer.

20. The method according to claim 17 wherein a second focused laser beam is used to irradiate the second layer.

21. The method according to claim 1 wherein the pitch of the array is less than or equal to approximately 10 microns.

22. The method according to claim 1 wherein a length of the filaments exceeds approximately 250 microns.

23. The method according to claim 1 wherein a length of the filaments exceeds approximately 600 microns.

24. The method according to claim 1 wherein a diameter of the filament is less than approximately 3 microns.

25. The method according to claim 1 wherein a diameter of the filament is less than approximately 10 microns.

26. The method according to claim 1 wherein, upon cleavage of the substrate, the kerf width is less than approximately 30 microns.

27. The method according to claim 1 wherein the filaments extend over a substantial portion of the substrate.

28. The method according to claim 27 wherein the filaments end without breaking into top or bottom surfaces of the substrate.

29. The method according to claim 27 wherein a location of a beam focus of the focused laser beam is selected to generate a V groove within at least one surface of the substrate.

30. The method according to claim 1 wherein a diffracted beam emerging through a bottom surface of the substrate is converged back onto the bottom surface of the substrate by a focusing element, such that a V groove is produced in the bottom surface of the substrate.

31. The method according to claim 1 wherein upon cleaving the substrate, the edge of the cleaved substrate is substantially free of chipping and microcracks.

Assignments (8)
PATENT RELEASE AND REASSIGNMENT - RELEASE OF REEL/FRAME 040574/0944 Recorded Jul 1, 2022
From: BARCLAYS BANK PLC, AS COLLATERAL AGENT
To: ROFIN-SINAR TECHNOLOGIES INC.
Reel/Frame 060561/0511 →
CHANGE OF NAME Recorded Apr 20, 2017
From: ROFIN-SINAR TECHNOLOGIES INC.
To: ROFIN-SINAR TECHNOLOGIES LLC
Reel/Frame 042301/0266 →
NOTICE OF GRANT OF SECURITY INTEREST IN PATENTS Recorded Nov 7, 2016
From: ROFIN-SINAR TECHNOLOGIES INC.
To: BARCLAYS BANK PLC, AS COLLATERAL AGENT
Reel/Frame 040574/0944 →
SETTLEMENT AGREEMENT Recorded May 20, 2015
From: KINESTRAL TECHNOLOGIES, INC.; ROFIN-SINAR TECHNOLOGIES, INC.; FILASER, INC.; FILASER USA, LLC
To: KINESTRAL TECHNOLOGIES, INC.
Reel/Frame 035750/0229 →
PATENT LICENSE AGREEMENT Recorded Apr 27, 2015
From: FILASER, INC.
To: KINESTRAL TECHNOLOGIES, INC.
Reel/Frame 035508/0408 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 9, 2014
From: FILASER USA LLC
To: ROFIN-SINAR TECHNOLOGIES INC.
Reel/Frame 033919/0509 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2013
From: HOSSEINI, S. ABBAS; HERMAN, PETER R.
To: FILASER INC.
Reel/Frame 029729/0109 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2013
From: FILASER INC
To: FILASER USA LLC
Reel/Frame 029729/0218 →
Continuity (3)
Provisional Application 61363568 · Jul 12, 2010
Provisional Application 61372967 · Aug 12, 2010
Related Publication 20130126573A1 · May 23, 2013