FERROELECTRIC DEVICE
A ferroelectric device comprises: a silicon substrate (a first substrate); a lower electrode (a first electrode) formed on one surface side of first substrate; a ferroelectric film formed on a surface of lower electrode opposite to first substrate side; and an upper electrode (a second electrode) formed on a surface of ferroelectric film opposite to lower electrode side. The ferroelectric film is formed of a ferroelectric material with a lattice constant difference from silicon. The ferroelectric device further comprises a shock absorbing layer formed of a material with better lattice matching with ferroelectric film than silicon and provided directly below the lower electrode. The first substrate is provided with a cavity that exposes a surface of shock absorbing layer opposite to lower electrode side.
1 . A ferroelectric device, comprising:
a silicon substrate;
a first electrode formed on one surface side of said silicon substrate;
a ferroelectric film formed on a surface of said first electrode opposite to said silicon substrate side; and
a second electrode formed on a surface of said ferroelectric film opposite to said first electrode side,
wherein said ferroelectric film is formed of a ferroelectric material with a lattice constant difference from silicon,
wherein the ferroelectric device further comprises a shock absorbing layer, said shock absorbing layer being formed of a material with better lattice matching with said ferroelectric film than silicon and being provided between said silicon substrate and said first electrode,
wherein said silicon substrate is provided with a cavity that exposes a surface of said shock absorbing layer opposite to said first electrode side.
2 . The ferroelectric device according to claim 1 ,
wherein said first electrode is located on a lower surface side of said ferroelectric film, as a lower electrode,
wherein said second electrode is located on an upper surface side of said ferroelectric film, as an upper electrode,
wherein said shock absorbing layer is provided directly below said lower electrode,
wherein at least a part of a lower surface of said shock absorbing layer is exposed through said cavity of said silicon substrate.
3 . The ferroelectric device according to claim 2 , further comprises a reinforcement layer, said reinforcement layer being provided on said one surface side of said silicon substrate, and being laminated on at least a part of a laminated structure provided with said shock absorbing layer, said lower electrode, said ferroelectric film and said upper electrode, thereby reinforcing the laminated structure.
4 . The ferroelectric device according to claim 2 , further comprises a second shock absorbing layer, in addition to a first shock absorbing layer that is said shock absorbing layer, said second shock absorbing layer being formed of a material with better lattice matching with said ferroelectric film than said lower electrode and being provided between said ferroelectric film and said lower electrode.
5 . The ferroelectric device according to claim 1 ,
wherein said material of said shock absorbing layer is a conductive material.
6 . The ferroelectric device according to claim 4 ,
wherein at least one of said material of said first shock absorbing layer and said material of said second shock absorbing layer is a conductive material.
7 . The ferroelectric device according to claim 1 ,
wherein said ferroelectric film is a pyroelectric film,
wherein said material of said shock absorbing layer has lower thermal conductivity than silicon.
8 . The ferroelectric device according to claim 5 ,
wherein said ferroelectric film is a pyroelectric film,
wherein said material of said shock absorbing layer has lower thermal conductivity than silicon.
9 . The ferroelectric device according to claim 4 ,
wherein said ferroelectric film is a pyroelectric film,
wherein said material of said first shock absorbing layer and said material of said second shock absorbing layer have lower thermal conductivity than silicon.
10 . The ferroelectric device according to claim 2 ,
wherein said material of said shock absorbing layer is a conductive material.
11 . The ferroelectric device according to claim 3 ,
wherein said material of said shock absorbing layer is a conductive material.
12 . The ferroelectric device according to claim 2 ,
wherein said ferroelectric film is a pyroelectric film,
wherein said material of said shock absorbing layer has lower thermal conductivity than silicon.
13 . The ferroelectric device according to claim 3 ,
wherein said ferroelectric film is a pyroelectric film,
wherein said material of said shock absorbing layer has lower thermal conductivity than silicon.
14 . The ferroelectric device according to claim 6 ,
wherein said ferroelectric film is a pyroelectric film,
wherein said material of said first shock absorbing layer and said material of said second shock absorbing layer have lower thermal conductivity than silicon.