Solar cell and method for manufacturing the same
View Patent ↗A solar cell according to an embodiment includes a semiconductor substrate; a first dopant layer formed at one surface of the semiconductor substrate; and a first electrode electrically connected to the first dopant layer. At least a part of the first dopant layer includes a pre-amorphization element, and a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.
1. A solar cell, comprising:
a semiconductor substrate;
a first dopant layer formed at one surface of the semiconductor substrate, wherein the first dopant layer includes a first conductive type dopant; and
a first electrode electrically connected to the first dopant layer,
wherein the first dopant layer includes a first portion disposed adjacent to the first electrode and a second portion that is other than the first portion of the first dopant layer,
wherein the second portion of the first dopant layer has a resistance larger than a resistance of the first portion of the first dopant layer,
wherein each of the first portion and the second portion of the first dopant layer has the first conductive type dopant,
wherein at least one of the first portion and the second portion of the first dopant layer includes a pre-amorphization element,
wherein a concentration of the pre-amorphization element in the second portion of the first dopant layer is higher than a concentration of the pre-amorphization element in the first portion of the first dopant layer,
wherein the semiconductor substrate has a base dopant having a second conductive type opposite to the first conductive type dopant of each of the first and the second portions of the first dopant layer, and
wherein the pre-amorphization element has an atomic number that is larger than an atomic number of the first conductive type dopant.
2. The solar cell according to claim 1 , wherein the first portion includes the first conductive type dopant without the pre-amorphization element, and
wherein the second portion includes the first conductive type dopant and the pre-amorphization element.
3. The solar cell according to claim 1 , wherein the pre-amorphization element includes at least one material selected from the group consisting of argon, germanium, and fluorine.
4. The solar cell according to claim 1 , wherein the first portion is thicker than the second portion.
5. The solar cell according to claim 1 , wherein, in the second portion, the concentration of the pre-amorphization element is higher than a concentration of the first conductive type dopant.
6. The solar cell according to claim 5 , wherein, in the second portion, the concentration of the pre-amorphization element is about 3 to 20 times the concentration of the first conductive type dopant.
7. The solar cell according to claim 1 , further comprising:
a second dopant layer formed at another surface of the semiconductor substrate, the second dopant layer including a second conductive type dopant; and
a second electrode electrically connected to the second dopant layer.
8. The solar cell according to claim 7 , wherein the second dopant layer includes a third portion disposed adjacent to the second electrode and a fourth portion that is other than the third portion of the second dopant layer, wherein the fourth portion of the second dopant layer has a resistance that is larger than a resistance of the third portion of the second dopant layer, and wherein the fourth portion of the second dopant layer includes an additional pre-amorphization element.
9. The solar cell according to claim 1 , wherein each of the first portion and the second portion of the first dopant layer includes the pre-amorphization element.