Size-controllable opening and method of making same
A support structure includes an internal cavity. An elastic membrane extends to divide the internal cavity into a first chamber and a second chamber. The elastic membrane includes a nanometric-sized pin hole extending there through to interconnect the first chamber to the second chamber. The elastic membrane is formed of a first electrode film and a second electrode film separated by a piezo insulating film. Electrical connection leads are provided to support application of a bias current to the first and second electrode films of the elastic membrane. In response to an applied bias current, the elastic membrane deforms by bending in a direction towards one of the first and second chambers so as to produce an increase in a diameter of the pin hole.
1. Apparatus, comprising:
a support structure including an internal cavity within the support structure; and
an elastic membrane extending to divide the internal cavity into a first chamber and a second chamber, the elastic membrane including a pin hole extending there through to interconnect the first chamber to the second chamber;
wherein the elastic membrane includes a first electrode film and a second electrode film separated by an insulating film, said elastic membrane configured to respond to an application of bias current of a first polarity to the first and second electrode films by bending in a direction towards the first chamber to increase a diameter of the pin hole; and
wherein said elastic membrane is further configured to respond to application of bias current of a second, opposite, polarity to the first and second electrode films by bending in a direction towards the second chamber to increase the diameter of the pin hole.
2. The apparatus of claim 1 , wherein the first and second electrode films are platinum-based and the insulating film is piezo-based.
3. The apparatus of claim 1 , wherein the support structure is formed of silicon oxide.
4. The apparatus of claim 1 , wherein the first chamber is lined with silicon nitride.
5. The apparatus of claim 1 , wherein the diameter of the pin hole is not larger than 100 nm.
6. The apparatus of claim 1 , wherein the diameter of the pin hole is about 1 μm.
7. The apparatus of claim 1 , wherein the elastic membrane further includes a protective covering on a portion of the first and second electrode films.
8. The apparatus of claim 1 , wherein the elastic membrane is partially encapsulated by an encapsulating material.
9. The apparatus of claim 1 , wherein the elastic membrane is partially encapsulated by an encapsulating material and is positioned between a first substrate and a second substrate.
10. Apparatus, comprising:
an elastic membrane extending to divide an internal cavity into a first chamber and a second chamber, the elastic membrane including a first electrode film and a second electrode film separated by an insulating piezo film and further including a pin hole extending through the elastic membrane to interconnect the first chamber to the second chamber; and
electrical connection leads configured to apply a received bias current to the first and second electrode films, said elastic membrane configured to bend in a first direction under a first applied bias current so as to increase the diameter of the pin hole and bend in a second direction under a second applied bias current so as to increase the diameter of the pin hole.
11. The apparatus of claim 10 , wherein the diameter of the pin hole is not larger than 100 nm.
12. The apparatus of claim 10 , further comprising a support structure including said internal cavity.
13. The apparatus of claim 10 , wherein the first chamber is lined with silicon nitride.
14. The apparatus of claim 10 , wherein the elastic membrane further includes a protective covering over the first and second electrode films.