Memory module connector with auxiliary power

1. An apparatus comprising:

a memory module including a semiconductor card having horizontal upper and lower card edges, a pair of vertical card edges, and a pair of opposing card faces, with card edge voltage pads along the lower card edge, auxiliary voltage pads along at least one of the vertical card edges, and one or more memory chips on one or both card faces;

a socket for receiving the memory module at the lower card edge and supporting the memory module in a fully seated position, the socket including a plurality of electrical socket contacts for engagement with the card edge voltage pads along the lower card edge when the memory module is in the fully seated position; and

a latch pivotally coupled to the socket and movable between a latched position and an unlatched position, the latch including electrical latch contacts positioned for being engaged with the auxiliary voltage pads when in the latched position and being disengaged from the auxiliary voltage pads when in the unlatched position.

2. The apparatus of claim 1 , wherein the one or more memory chips comprise one or more persistent solid-state memory devices.

3. The apparatus of claim 2 , further comprising:

an auxiliary voltage source in electrical communication with the latch contacts for supplying a voltage to the auxiliary voltage pads of the persistent, solid-state memory devices.

4. The apparatus of claim 3 , wherein the auxiliary voltage source supplies at least about 12V to the auxiliary voltage pads.

5. The apparatus of claim 3 , wherein the electrical socket contacts engage the card edge voltage pads and supply a voltage that is different than the voltage supplied to the auxiliary voltage pads on the vertical card edges.

6. The apparatus of claim 1 , further comprising:

an electrically conductive beam extending through the latch and having a lower end for connecting to a voltage line of a printed circuit board and an upper end defining the latch contacts, wherein the beam is configured for flexing with movement of the latch between the open and closed positions.

7. The apparatus of claim 1 , further comprising:

a notch on each of the vertical card edges, wherein the one or more auxiliary voltage pads comprise an auxiliary voltage pad on each card face adjacent to the notch.

8. The apparatus of claim 7 , wherein the auxiliary voltage pad on each card face adjacent to the notch is vertically aligned with the notch.

9. The apparatus of claim 1 , wherein the socket is configured to interchangeably receive the memory module or a standard-length dual in-line memory module (DIMM).

10. The apparatus of claim 9 , wherein the auxiliary voltage pads on opposite vertical edges of the memory module and the latch contacts on opposite side latches are spaced greater than the standard length of the DIMM.

11. A memory system comprising:

a persistent, solid-state memory module including a card having horizontal upper and lower card edges, a pair of vertical card edges, and a pair of opposing card faces, with card edge voltage pads along the lower card edge, auxiliary voltage pads along at least one of the vertical card edges, and a persistent, solid-state memory structure on one or both card faces;

a socket for receiving the persistent, solid-state memory module at the lower card edge and supporting the persistent, solid-state memory module in a fully seated position, the socket including a plurality of electrical socket contacts for engagement with the card edge voltage pads along the lower card edge when the memory module is in the fully seated position;

a latch pivotally coupled to the socket and movable between a latched position and an unlatched position, the latch including electrical latch contacts positioned for being engaged with the auxiliary voltage pads when the latch is in the latched position and being disengaged from the auxiliary voltage pads when the latch is in the unlatched position; and

an auxiliary voltage source in electrical communication with the latch contacts for supplying a voltage to the auxiliary voltage pads of the persistent, solid-state memory module.

12. The memory system of claim 1 , wherein the persistent, solid-state memory module has the length of a standard dual in-line memory module (DIMM) and the socket is sized to interchangeably receive a standard DIMM or the persistent, solid-state memory module.

13. The memory system of claim 12 , further comprising:

a processor and a memory controller in electronic communication with the socket, the processor and memory controller configured for sensing the presence or absence of the auxiliary voltage pad to determine whether the persistent, solid-state memory module or a standard DIMM is inserted into the socket.

14. The memory system of claim 11 , wherein the auxiliary voltage source supplies at least about 12V to the auxiliary voltage pads.

15. The memory system of claim 13 , wherein the socket contacts engage the card edge voltage pads and supply a voltage that is different than the voltage supplied to the auxiliary voltage pads on the vertical card edges.

16. The memory system of claim 11 , further comprising:

an electrically conductive beam extending through the latch and having a lower end for connecting to a voltage line of a printed circuit board and an upper end defining the latch contacts, the beam configured for flexing with movement of the latch between the open and closed positions.

17. The memory system of claim 11 , further comprising:

a notch on each of the vertical card edges, wherein the one or more auxiliary voltage pads comprise an auxiliary voltage pad on each card face adjacent to the notch.

18. The memory system of claim 17 , wherein the auxiliary voltage pad on each card face adjacent to the notch is vertically aligned with the notch.

19. The memory system of claim 11 , wherein the auxiliary voltage pads on opposite vertical edges of the memory module and the latch contacts on opposite side latches are spaced greater than the standard length of the DIMM.

20. The memory system of claim 1 , wherein the memory module comprises an NV-DIMM.