Response-enhanced monolithic-hybrid pixel
A light-sensing pixel for detecting at least a portion of the electromagnetic spectrum includes a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum. The light-sensing pixel further includes a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the first range of wavelengths and the first and second detector element are formed monolithically on a silicon substrate.
1. A light-sensing imager for detecting at least a portion of the electromagnetic spectrum, comprising:
a first detector element having a micro-structured surface for detecting an infrared range of wavelengths of the electromagnetic spectrum; and
a second detector element for detecting a second range of wavelengths of the electromagnetic spectrum, wherein the second range of wavelengths is shorter than the infrared range of wavelengths and the first and second detector elements are formed monolithically on a common silicon substrate.
2. The imager of claim 1 , wherein the micro-structured surface is formed by laser irradiation.
3. The imager of claim 1 , further comprising a collection point for accumulating a first electrical output of the first detector element and a second electrical output of the second detector.
4. The imager of claim 3 , wherein the collection point comprises a single collection capacitor constructed and arranged to combine a first current from the first detector and a second current from the second detector to cause an integrated charge on the single collection capacitor.
5. The imager of claim 1 , further comprising a bias point for selectively applying a biasing voltage to the first detector element and capable of affecting the first electrical output of the first detector element, wherein the bias point is constructed and arranged to selectively substantially shut off the first electrical output of the first detector element.
6. The imager of claim 5 , wherein the bias point is constructed and arranged to selectively apply a reverse bias voltage to selectively shut off the first electrical output of the first detector element.
7. The imager of claim 1 , further comprising a single output point for providing an electrical output of the imager.
8. The imager of claim 1 , wherein the second detector element comprises a semiconducting photodetector element that is sensitive to electromagnetic wavelengths in a visible range of the electromagnetic spectrum.
9. The imager of claim 1 , further comprising readout circuitry including addressing switch points for addressing the imager.
10. The imager of claim 9 , further comprising a post for coupling the second detector element to the readout circuitry and a collection point.
11. The imager of claim 10 , wherein the collection point comprises a capacitor which collects an electrical charge from the first and second detector elements.
12. The imager of claim 10 , further comprising a reset switch coupled to the collection point.
13. The imager of claim 3 , wherein the first and second electrical outputs comprise respective first and second electrical currents, and a bias point comprises a bias voltage terminal electrically coupled to the first and second detector elements and coupled to the collection point so as to control the first and second electrical currents.
14. The imager of claim 13 , wherein the bias point is constructed and arranged to selectively substantially shut off the first electrical output of the first detector element.
15. The imager of claim 1 , wherein the imager provides an electrical output that can be addressably sensed and contributes to a collective output of an imager array.
16. The imager of claim 15 , wherein an image corresponding to the collective output of the imager array can be captured or displayed.
17. The imager of claim 1 , wherein the imager is incorporated into a portable light sensing device.
18. The imager of claim 3 , further comprising a read buffer configured to allow varying integration times without losing a collected charge from the collection point.
19. The imager of claim 1 , further comprising an output point for providing an electrical output of the imager, the output point having an output voltage corresponding to an integrated charge on a single collection point.
20. A light-sensing imager for detecting at least a portion of the electromagnetic spectrum,
comprising:
a first detector element having a micro-structured surface for detecting an infrared range of the electromagnetic spectrum, wherein the first detector element creates a first current;
a second detector element for detecting a visible range of wavelengths of the electromagnetic spectrum, wherein the second detector element creates a second current and the first and second detector elements are formed monolithically on a common silicon substrate;
a single collection capacitor constructed and arranged to combine the first current and the second current to cause an integrated charge on the single collection capacitor;
a bias point disposed between the first detector element and the second detector element, the bias point constructed and arranged to selectively apply a reverse bias voltage to selectively substantially shut off the first detector element; and
an output point for providing an electrical output of the light-sensing pixel, the output point having an output voltage corresponding to the integrated charge on the single collection capacitor.