Process for producing at least one deep trench isolation
View Patent ↗A method for producing at least one deep trench isolation in a semiconductor substrate including silicon and having a front side may include forming at least one cavity in the semiconductor substrate from the front side. The method may include conformally depositing dopant atoms on walls of the cavity, and forming, in the vicinity of the walls of the cavity, a silicon region doped with the dopant atoms. The method may further include filling the cavity with a filler material to form the at least one deep trench isolation.
1. A method of making at least one deep trench isolation in a semiconductor substrate comprising silicon and having a front side, the method comprising:
forming at least one cavity in the semiconductor substrate from the front side;
conformally depositing dopant atoms on walls of the at least one cavity by forming a layer of doped silicon that does not fill the at least one cavity;
forming, adjacent the walls of the at least one cavity, a doped silicon region doped with the dopant atoms; and
filling the at least one cavity with a filler material by depositing a dielectric material to form the at least one deep trench isolation.
2. The method according to claim 1 , wherein the conformal deposition of dopant atoms comprises a chemical vapor deposition of dopant atoms.
3. The method according to claim 1 , further comprising cleaning the walls of the at least one cavity before conformally depositing dopant atoms.
4. The method according to claim 1 , wherein the doped silicon region is formed while conformally depositing the doped silicon.
5. The method according to claim 1 , wherein the at least one cavity is filled with the filler material while depositing the doped silicon.
6. The method according to claim 1 , wherein forming the doped silicon region comprises diffusing dopant atoms deposited on the walls of the at least one cavity into the silicon of the substrate.
7. A method of making at least one deep trench isolation in a semiconductor substrate, the method comprising:
forming at least one cavity in the semiconductor substrate;
conformally depositing dopant atoms within the at least one cavity by forming a layer of doped silicon that does not fill the at least one cavity;
forming, adjacent the at least one cavity, a doped semiconductor region doped with the dopant atoms; and
filling the at least one cavity with a filler material by depositing a dielectric material to form the at least one deep trench isolation.
8. The method according to claim 7 , wherein the conformal deposition of dopant atoms comprises a chemical vapor deposition of dopant atoms.
9. The method according to claim 7 , further comprising cleaning the walls of the at least one cavity before conformally depositing dopant atoms.
10. The method according to claim 7 , wherein the doped semiconductor region is formed while conformally depositing the doped silicon.
11. The method according to claim 7 , wherein the at least one cavity is filled with the filler material while depositing the doped silicon.
12. The method according to claim 7 , wherein forming the doped semiconductor region comprises diffusing dopant atoms deposited on the walls of the at least one cavity into the semiconductor substrate.
13. A method of bounding a photosensitive zone of a pixel of an integrated imaging device comprising a semiconductor substrate comprising silicon and having a front side, the method comprising:
forming at least one cavity in the semiconductor substrate from the front side;
conformally depositing dopant atoms on walls of the at least one cavity by forming a layer of doped silicon that does not fill the at least one cavity;
forming, adjacent the walls of the at least one cavity, a doped silicon region doped with the dopant atoms; and
filling the at least one cavity with a filler material to bound the photosensitive zone by depositing a dielectric material.
14. The method according to claim 13 , wherein the conformal deposition of dopant atoms comprises a chemical vapor deposition of dopant atoms.
15. The method according to claim 13 , further comprising cleaning the walls of the at least one cavity before conformally depositing dopant atoms.
16. The method according to claim 13 , wherein the doped silicon region is formed while conformally depositing the doped silicon.
17. The method according to claim 13 , wherein the at least one cavity is filled with a filler material while depositing the doped silicon.
18. The method according to claim 13 , wherein forming the doped silicon region comprises diffusing dopant atoms deposited on the walls of the at least one cavity into the silicon of the substrate.