Surface emitting semiconductor laser and its manufacturing method, surface emitting semiconductor laser device, optical transmitter, and information processor

1. A surface emitting semiconductor laser, comprising:

a substrate;

a first semiconductor distributed bragg reflector of a first conductive type formed on the substrate;

an active region formed on the first semiconductor distributed bragg reflector;

a second semiconductor distributed bragg reflector of a second conductive type formed on the active region;

a current confinement layer that confines current flowing in the active region;

an optical confinement layer that confines light generated in the active region; and

an optical loss unit that is provided in addition to the current confinement layer and the optical confinement layer, includes a center portion and a periphery portion in a predetermined direction, and gives a larger optical loss to the periphery portion than an optical loss given to the center portion,

wherein Do 1 <Do 2 and Dn<Do 2 are satisfied, where Do 1 is a width of an optical confinement region of the optical confinement layer in the predetermined direction, Do 2 is a width of a current confinement region of the current confinement layer in the predetermined direction, and Dn is a width of the center portion of the optical loss unit in the predetermined direction.

2. The surface emitting semiconductor laser according to claim 1 , wherein Do 1 ≦Dn<Do 2 is satisfied.

3. The surface emitting semiconductor laser according to claim 1 , wherein the optical loss unit is formed in a light emitting region on the second semiconductor distributed bragg reflector.

4. The surface emitting semiconductor laser according to claim 1 , wherein the current confinement layer and the optical confinement layer are formed by selectively oxidizing semiconductor layers.

5. The surface emitting semiconductor laser according to claim 1 ,

wherein the current confinement layer is formed by implanting an ion to a semiconductor layer, and

wherein the optical confinement layer is formed by selectively oxidizing a semiconductor layer.

6. The surface emitting semiconductor laser according to claim 1 ,

wherein the current confinement layer includes a tunnel junction region, and

wherein the optical confinement layer is formed by selectively oxidizing a semiconductor layer.

7. The surface emitting semiconductor laser according to claim 1 , wherein the optical loss unit decreases a reflectivity of the periphery portion by a larger value as compared with a reflectivity of the center portion.

8. The surface emitting semiconductor laser according to claim 1 , wherein the optical loss unit includes at least a dielectric film formed on the second semiconductor distributed bragg reflector.

9. The surface emitting semiconductor laser according to claim 1 , wherein the optical loss unit is formed by etching at least a topmost layer of the second semiconductor distributed bragg reflector.

10. The surface emitting semiconductor laser according to claim 1 , wherein the optical loss unit includes a metal film formed on the second semiconductor distributed bragg reflector.

11. The surface emitting semiconductor laser according to claim 1 ,

wherein a substantially columnar structure is formed on the substrate,

wherein the current confinement layer and the optical confinement layer are formed in the substantially columnar structure, and

wherein the optical loss unit is formed at a top of the substantially columnar structure.

12. The surface emitting semiconductor laser according to claim 1 ,

wherein a plurality of holes extending from the second semiconductor distributed bragg reflector to the first semiconductor distributed bragg reflector are formed, and

wherein the current confinement layer and the optical confinement layer include an oxidation region that is selectively oxidized through the holes.

13. The surface emitting semiconductor laser according to claim 1 ,

wherein a substantially columnar structure is formed on the substrate by removing the second semiconductor distributed bragg reflector,

wherein a plurality of holes are formed in the first semiconductor distributed bragg reflector exposed from the substantially columnar structure,

wherein the current confinement layer includes an oxidation region that is selectively oxidized from a side surface exposed from the substantially columnar structure, and

wherein the optical confinement layer includes an oxidation region that is selectively oxidized through the holes.

14. The surface emitting semiconductor laser according to claim 1 ,

wherein the optical confinement layer is formed in the first semiconductor distributed bragg reflector,

wherein the current confinement layer is formed in the second semiconductor distributed bragg reflector, and

wherein a distance from the active region to the optical confinement layer is larger than a distance from the active region to the current confinement layer.

15. The surface emitting semiconductor laser according to claim 1 , wherein the width Do 1 of the optical confinement layer is a size that causes oscillation in a fundamental transverse mode.

16. A surface emitting semiconductor laser device, comprising:

the surface emitting semiconductor laser according to claim 1 , and

an optical member, light from the surface emitting semiconductor laser being incident on the optical member.

17. An optical transmitter, comprising:

the surface emitting semiconductor laser device according to claim 16 , and

a transmitting unit that transmits laser light emitted from the surface emitting semiconductor laser device through an optical medium.

18. An information processor, comprising:

the surface emitting semiconductor laser according to claim 1 ,

a light collecting unit that collects laser light emitted form the surface emitting semiconductor laser on a recording medium, and

a mechanism that causes the laser light collected by the light collecting unit to scan on the recording medium.

19. A manufacturing method of a surface emitting semiconductor laser, the surface emitting semiconductor laser including

a substrate,

a first semiconductor distributed bragg reflector of a first conductive type formed on the substrate,

an active region formed on the first semiconductor distributed bragg reflector, and

a second semiconductor distributed bragg reflector of a second conductive type formed on the active region,

the method comprising:

forming a substantially ring-shaped electrode having an opening on the second semiconductor distributed bragg reflector;

forming a first dielectric film that covers the opening of the electrode;

forming a second dielectric film that covers the first dielectric film;

forming a first opening that allows the second semiconductor distributed bragg reflector to be exposed and a second opening that allows the first dielectric film to be exposed, in the second dielectric film by etching the second dielectric film;

forming a substantially columnar structure on the substrate by etching at least the second semiconductor distributed bragg reflector while using at least the second dielectric film that defines the first opening as a mask;

forming a current confinement layer that confines current flowing in the active region by selectively oxidizing a semiconductor layer of the second semiconductor distributed bragg reflector from a side surface of the substantially columnar structure; and

forming an optical confinement layer in the first semiconductor distributed bragg reflector, the optical confinement layer confining light generated in the active region,

wherein Do 1 <Do 2 and Dn<Do 2 are satisfied, where Do 1 is a width of an optical confinement region of the optical confinement layer in a predetermined direction, Do 2 is a width of a current confinement region of the current confinement layer in the predetermined direction, and Dn is a width of the second opening of the second dielectric layer in the predetermined direction, and

wherein a reflectivity of a region of the first dielectric film covered with the second dielectric film is lower than a reflectivity of a region of the first dielectric film not covered with the second dielectric film.

20. The manufacturing method according to claim 19 ,

wherein the forming the optical confinement layer includes

forming a plurality of holes in the first semiconductor distributed bragg reflector, and

forming the optical confinement layer that is selectively oxidized in the first semiconductor distributed bragg reflector through the plurality of holes, and

wherein the optical confinement layer and the current confinement layer are simultaneously formed.