Devices having high dielectric constant, ionically-polarizable materials

1. An electronic or electro-optic device, comprising:

a first electrode;

a second electrode spaced apart from said first electrode;

a hybrid semiconductor-dielectric layer disposed between said first electrode and said second electrode; and

a dielectric layer disposed between said first and second electrodes,

wherein said dielectric layer comprises electrically insulating planar layers with intercalated ions therebetween, said electrically insulating planar layers providing a barrier to impede movement of said intercalated ions to said first and second electrodes under an applied voltage while permitting a polarization of said dielectric layer while in operation, and

wherein said hybrid semiconductor-dielectric layer comprises molecules that have a semiconducting portion and a dielectric portion.

2. An electronic or electro-optic device according to claim 1 , wherein said electrically insulating planar layers are metal-oxide planar layers.

3. An electronic or electro-optic device according to claim 2 , wherein said metal-oxide planar layers comprise aluminum oxide.

4. An electronic or electro-optic device according to claim 1 , wherein said intercalated ions are sodium ions.

5. An electronic or electro-optic device according to claim 1 , wherein said intercalated ions are selected from at least one of sodium, potassium, calcium, silver, strontium and lanthanum ions.

6. An electronic or electro-optic device according to claim 1 , wherein said dielectric layer comprises at least one of sodium beta alumina or sodium beta-double-prime alumina.

7. An electronic or electro-optic device according to claim 1 , wherein said electronic or electro-optic device is a capacitor.

8. An electronic or electro-optic device according to claim 1 , further comprising a semiconductor layer disposed between said first electrode and said second electrode.

9. An electronic or electro-optic device according to claim 1 , further comprising a third electrode spaced apart from said first and second electrodes such that said dielectric layer and said hybrid semiconductor-dielectric layer are arranged between said third electrode and said second electrode.

10. An electronic or electro-optic device according to claim 9 , wherein said electronic or electro-optic device is a field effect transistor.

11. An electronic or electro-optic device according to claim 9 , wherein said first and third electrodes are in contact with said hybrid semiconductor-dielectric layer to provide drain and source electrodes, respectively, and said second electrode provides a gate electrode such that said electronic or electro-optic device is a field effect transistor.

12. An electronic or electro-optic device according to claim 9 , wherein said hybrid semiconductor-dielectric layer comprises an n-type semiconductor layer.

13. An electronic or electro-optic device according to claim 12 , wherein said n-type semiconductor layer is an inorganic n-type semiconductor layer.

14. An electronic or electro-optic device according to claim 12 , wherein said n-type semiconductor layer is an organic n-type semiconductor layer.

15. An electronic or electro-optic device according to claim 12 , further comprising a p-type semiconductor layer disposed between said first and second electrodes in contact with said n-type semiconductor layer to provide an electronic or electro-optic device having a p-n junction.

16. An electronic or electro-optic device according to claim 15 , wherein said p-type semiconductor layer is an organic semiconductor layer.

17. An electronic or electro-optic device according to claim 15 , wherein said n-type and p-type semiconductor layers are arranged laterally in a side-by-side configuration.

18. An electronic or electro-optic device according to claim 15 , wherein said n-type and p-type semiconductor layers are arranged with one layer disposed on top of the other.

19. A method of producing an electronic or electro-optic device, comprising:

providing a first electrode;

providing second electrode spaced apart from said first electrode; and

disposing a dielectric layer between said first and second electrodes,

wherein said dielectric layer is formed by a chemical synthesis to comprise electrically insulating planar layers with intercalated ions therebetween, said electrically insulating planar layers providing a barrier to impede movement of said intercalated ions to said first and second electrodes under an applied voltage while permitting a polarization of said dielectric layer while in operation.

20. A method of producing an electronic or electro-optic device according to claim 19 , further comprising disposing a hybrid semiconductor-dielectric layer disposed between said first electrode and said second electrode,

wherein said hybrid semiconductor-dielectric layer comprises molecules that have a semiconducting portion and a dielectric portion.

21. A two-electrode capacitor, consisting essentially of:

a first electrode;

a second electrode spaced apart from said first electrode; and

an energy storage medium disposed between said first and second electrodes,

wherein said energy storage medium comprises a dielectric layer, and

wherein said dielectric layer comprises electrically insulating planar layers with intercalated ions therebetween, said electrically insulating planar layers providing a barrier to impede movement of said intercalated ions to said first and second electrodes under an applied voltage while permitting a polarization of said dielectric layer while in operation.

22. A two-electrode capacitor according to claim 21 , wherein said energy storage medium consists essentially of said dielectric layer, and

wherein said dielectric layer consists essentially of electrically insulating planar layers with intercalated ions therebetween.