IP Library Granted Patent US 9,030,328
Granted Patent B2
US 9,030,328 · App. 13/655,029 · Granted May 12, 2015

Integrated circuit to operate in an area of ionizing radiation, and having an output for a radiation dose-dependent way damage information, and alarm indicators and corresponding method

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Quick Facts
Patent No.
US 9,030,328
App. No.
13/655,029
Granted
May 12, 2015
Kind
B2
Abstract

An integrated circuit, in particular a microcontroller, for operation in an area with ionizing radiation, has at least one part of a temperature control circuit. The temperature control circuit performs a regulated increase in the circuit temperature to a predefined, essentially constant operating temperature, by increasing the electrical power consumption of the circuit by an adjustable additional electrical power. The circuit has an output facility for information about damage to the integrated circuit caused by the ionizing radiation impacting thereon, it being possible to determine the information about damage from a radiation-dose-dependent decrease in the adjustable additional electrical power.

Claims (56)

1. An integrated circuit device for operation in an area with ionizing radiation, comprising:

an integrated circuit;

at least one part of a temperature control circuit to increase a temperature of the integrated circuit to an operating temperature above a normal-operation ambient temperature, and to regulate the temperature to maintain the operating temperature, the temperature control circuit operating by supplying an adjustable additional electrical power to the integrated circuit; and

an output facility to receive information regarding the additional electrical power supplied to the integrated circuit, to correlate a radiation dose with a decrease in the additional electrical power, and to determine information about damage to the integrated circuit caused by ionizing radiation impacting on the integrated circuit, the information about damage being determined from a radiation-dose-dependent decrease in the additional electrical power.

2. The integrated circuit device as claimed in claim 1 , wherein the operating temperature is a temperature between 70° C. and a maximum operating temperature specified by a manufacturer of the integrated circuit.

3. The integrated circuit device as claimed in claim 1 , wherein

the integrated circuit is formed from a semiconductor chip,

the integrated circuit is provided in a chip housing, and

a heating element to heat the integrated circuit is provided on the semiconductor chip and/or in the chip housing.

4. The integrated circuit device as claimed in claim 1 , wherein

the integrated circuit is formed from a semiconductor chip,

a temperature sensor to detect the temperature of the integrated circuit is integrated on the semiconductor chip, and

the temperature sensor is part of the temperature control circuit.

5. The integrated circuit device as claimed in claim 1 , wherein

the integrated circuit is formed from a semiconductor chip,

a pn diode temperature sensor to detect the temperature of the integrated circuit is integrated on the semiconductor chip, and

the temperature sensor is part of the temperature control circuit.

6. The integrated circuit device as claimed in claim 1 , the integrated circuit is part of a microcontroller, microprocessor, a field-programmable gate array (FPGA) or an application specific integrated circuit (ASIC) manufactured using complementary metal-oxide-semiconductor (CMOS) technology.

7. The integrated circuit device as claimed in claim 1 , wherein

the integrated circuit is a processor-aided circuit, and

at least one part of the temperature control circuit is implemented as a computer program executed on the processor-aided circuit.

8. The integrated circuit device as claimed in claim 7 , wherein

a temperature sensor detects the temperature of the processor-aided circuit and outputs an electrical measured variable, and

the processor-aided circuit has an analog/digital converter to detect the electrical measured variable output by the temperature sensor, to correlate the electrical measured variable with temperature, and to output a digital value corresponding to the temperature.

9. The integrated circuit device as claimed in claim 7 , wherein

the processor-aided circuit is a microcontroller,

the computer program regulates the temperature of the microcontroller by selectively switching on at least one internal functional module of the microcontroller selected from the group consisting of a timer, a memory, a clock, a hardware multiplier, digital memory access (DMA), watchdog, a serial interface, a comparator, a digital to analog converter (DAC), an analog output and a digital output, and

the additional electrical power is used to selectively switch on the least one internal function of the microcontroller.

10. The integrated circuit device as claimed in claim 9 , wherein the computer program selects the at least one internal functional module to achieve an even heat loss across a surface of the microcontroller.

11. The integrated circuit device as claimed in claim 7 , wherein when executed on the processor-aided circuit, the computer program performs functions comprising:

determining the additional electrical power required to regulate the temperature of the integrated circuit;

determining the information about damage to the integrated circuit from the radiation-dose-dependent decrease in the additional electrical power; and

outputting a warning message if the additional electrical power falls below a predefined minimum value.

12. The integrated circuit device as claimed in claim 1 , wherein the integrated circuit is enclosed in heat-insulating encapsulation.

13. A fire alarm for operation in an area with ionizing radiation, comprising:

a detector unit to detect a hazard parameter associated with fire; and

an integrated circuit device comprising:

alarm circuitry to selectively output an alarm signal based on the hazard parameter;

at least one part of a temperature control circuit to increase a temperature of the integrated circuit to an operating temperature above a normal-operation ambient temperature, and to regulate the temperature to maintain the operating temperature, the temperature control circuit operating by supplying an adjustable additional electrical power to the integrated circuit; and

an output facility to receive information regarding the additional electrical power supplied to the integrated circuit, to correlate a radiation dose with a decrease in the additional electrical power, and to determine information about damage to the integrated circuit caused by ionizing radiation impacting on the integrated circuit, the information about damage being determined from a radiation-dose-dependent decrease in the additional electrical power.

14. The hazard alarm as claimed in claim 13 , wherein

the detector unit is a linear smoke detector comprising:

a light emitter to emit a light beam; and

a light receiver to receive the light beam after the light beam traverses a measured distance, in order to detect the hazard parameter.

15. The hazard alarm as claimed in claim 13 , wherein

the detector unit is a linear smoke detector comprising:

a light emitter to emit a light beam;

a light receiver to receive the light beam after the light beam traverses a measured distance, in order to detect the hazard parameter; and

a deflection unit to deflect the light beam emitted by the light emitter back to the light receiver.

16. The hazard alarm as claimed in claim 13 , wherein a warning message is output to a hazard alarm panel connected to the hazard alarm using signal or data processing technology, if the additional electrical power falls below a predefined minimum value.

17. A method for determining information about damage to an integrated circuit caused by ionizing radiation impacting thereon, comprising:

increasing a circuit temperature of the integrated circuit to an operating temperature above a normal-operation ambient temperature,

maintaining the operating temperature, in order to at least partially offset an increased electrical hole-type conductivity induced in a semiconductor chip of the integrated circuit by the ionizing radiation by a hole recombination rate which increases as the circuit temperature increases;

using an adjustable additional electrical power to increase the circuit temperature and to maintain the operating temperature;

determining information about damage to the integrated circuit based on a decrease in the additional electrical power; and

outputting the information about damage.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 4, 2015
From: SIEMENS AKTIENGESELLSCHAFT
To: SIEMENS SCHWEIZ AG
Reel/Frame 036492/0484 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 11, 2013
From: SIEMENS SCHWEIZ AG
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 029927/0256 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 8, 2013
From: AEBERSOLD, HANS
To: SIEMENS SCHWEIZ AG
Reel/Frame 029927/0123 →