Semiconductor packages and methods of formation thereof

1. A semiconductor device comprising:

a lead frame comprising a die paddle and a first lead;

a chip disposed over the die paddle of the lead frame; and

a clip disposed over the chip, the clip coupling a first pad on the chip to the first lead of the lead frame, the clip comprising a clip substrate comprising a first portion, a second portion, a third portion, and a recess,

wherein the first portion includes a first contact surface coupling the first pad,

wherein the second portion includes a substantially vertical connection region and a substantially planar connection region, the substantially vertical connection region having a second contact surface coupling the first lead, wherein the substantially planar connection region of the second portion of the clip substrate comprises a first section, a second section, and a third section,

wherein the recess is disposed in the clip substrate and separates the substantially vertical connection region from the first portion, wherein the first section is disposed above the first lead and a portion of the recess, wherein the second section is disposed directly beneath the third portion of the clip substrate, and wherein the third section extends away from the first section and the second section, and

wherein the third portion includes a heat sink, wherein the second portion is disposed between the first portion and the third portion, wherein the recess overlaps with the third portion, and wherein the first portion, the second portion and the third portion are part of a same base material; and

an encapsulant surrounding the clip, wherein a top surface of the third portion is not covered by the encapsulant, and wherein a top surface of the third portion is about coplanar with a top surface of the encapsulant so as to expose the top surface of the third portion, wherein the base material of the third portion extends continuously from the exposed top surface of the third portion to an opposite bottom surface facing the chip.

2. The device of claim 1 , wherein the first portion has a first width, the second portion has a second width, the third portion has a third width, wherein the first, the second, and third widths are measured in a direction parallel to a major surface of the chip.

3. The device of claim 1 , wherein the first portion has a first thickness, the second portion has a second thickness, the third portion has a third thickness, wherein the first, the second, and third thicknesses are measured in a direction perpendicular to a major surface of the chip, wherein the second portion is above the first portion and the third portion is above the second portion, and wherein the third thickness is larger than the first thickness and the second thickness.

4. The device of claim 1 , wherein the clip comprises copper.

5. The device of claim 1 , further comprising an interconnect coupling second pad of the chip with a second lead of the lead frame.

6. The device of claim 5 , wherein the second pad is a gate contact, and wherein the first pad is a source contact.

7. The device of claim 5 , wherein the interconnect comprises another clip, and wherein the another clip does not comprise a heat sink and is embedded within the encapsulant.

8. The device of claim 1 , further comprising a conductive layer disposed between the chip and the clip.

9. The device of claim 1 , further comprising a conductive layer disposed between the chip and the die paddle.

10. A semiconductor device comprising:

a lead frame comprising a die paddle and a first lead;

a chip disposed over the die paddle of the lead frame;

a clip disposed over the chip, the clip coupled to the first lead and to a first pad of the chip, the clip comprising a clip substrate comprising a first portion having a first width, a second portion having a second width, a third portion having a third width, and a recess, the second portion being above the first portion, the third portion being above the second portion,

wherein the first portion comprises a contact surface for coupling to the chip,

wherein the second portion comprises a substantially vertical connection region and a substantially planar connection region, the substantially vertical connection region having a second contact surface for coupling to the first lead,

wherein the recess is disposed in the clip substrate and separates the substantially vertical connection region from the first portion, and

wherein the third portion comprises a heat sink, wherein the second portion is disposed between the first portion and the third portion, wherein the recess overlaps with the third portion, and wherein the first portion, the second portion, and the third portion are part of a same base material, wherein the first portion changes to the second portion along a first sidewall surface comprising a first concave shape, and wherein the second portion changes to the third portion along a second sidewall surface comprising a second concave shape, wherein the first concave shape and the second concave shape are oriented differently relative to each other; and

an encapsulant surrounding the clip, wherein a top surface of the third portion is not covered by the encapsulant, and wherein a top surface of the third portion is about coplanar with a top surface of the encapsulant so as to expose the top surface of the third portion, wherein the base material of the third portion extends without interruption by another layer from the exposed top surface of the third portion to an opposite bottom surface facing the chip.

11. The device of claim 10 , wherein the second width is larger than the first width and the third width.

12. The device of claim 10 , wherein the first portion comprises a first thickness, the second portion comprises a second thickness, and the third portion comprises a third thickness, wherein the third thickness is larger than the first thickness and the second thickness, and wherein the first, the second, and third thicknesses are measured in a direction perpendicular to a major surface of the chip.

13. The device of claim 10 , wherein the first, the second, and third widths are measured in a direction parallel to a major surface of the chip.

14. The device of claim 10 , wherein the clip comprises copper.

15. The device of claim 10 , wherein the first portion is coupled to the first pad of the chip, and wherein the second portion is coupled to the first lead of the lead frame.

16. The device of claim 10 , further comprising an interconnect coupling second pad of the chip with a second lead of the lead frame.

17. The device of claim 16 , wherein the second pad is a gate contact, and wherein the first pad is a source contact.

18. The device of claim 16 , wherein the interconnect comprises another clip or a wire bond.

19. The device of claim 10 , wherein a sidewall of the third portion is not covered by the encapsulant.

20. A method of forming a semiconductor device, the method comprising:

forming a clip by structuring a base material, wherein structuring the base material comprises

after forming a first etch mask at a first side of the base material, etching the base material from the first side to form a first portion, and

after forming a second etch mask at a second side opposite the first side of the base material, etching the base material from the second side to form a third portion comprising a heat sink;

attaching the clip to a chip, the first side facing the chip; and

attaching the chip and the clip to a lead frame; and

encapsulating the chip and the clip in a encapsulant, wherein a top surface of the heat sink remains exposed after the encapsulating.

21. The method of claim 20 , further comprising stamping the clip after structuring the base material.

22. The method of claim 20 , wherein attaching the clip to the chip comprises soldering the clip to the chip.

23. The method of claim 20 , wherein the clip comprises a first portion having a first width, a second portion having a second width, and a third portion having a third width, wherein the second portion is disposed above the first portion and the third portion is disposed above the second portion, and wherein the first, the second, and third widths are measured in a direction parallel to a major surface of the chip.

24. The method of claim 20 , wherein the clip comprises a first portion having a first thickness, a second portion having a second thickness, a third portion having a third thickness, wherein the first, the second, and third thicknesses are measured in a direction perpendicular to a major surface of the chip, wherein the second portion is above the first portion and the third portion is above the second portion, and wherein the third thickness is larger than the first thickness and the second thickness.