Write word-line assist circuitry for a byte-writeable memory

1. A method, comprising:

providing, at a first voltage, operating power to a main word-line decoder of a memory;

providing, at a second voltage, operating power to a portion of write byte signal control logic and a local word-line decoder of the memory, the second voltage higher than the first voltage;

receiving, at the local word-line decoder, a main word-line signal generated by the main word-line decoder;

receiving, at the local word-line decoder, a write byte signal generated by the portion of the write byte signal control logic; and

generating, at the local word-line decoder and in response to receiving the main word-line signal and the write byte signal, a local word-line signal effective to enable data to be written to the memory.

2. The method of claim 1 , further comprising writing a bit of the data to a bit-cell of the memory based on complementary bit-line signals that indicate a value for the bit of data.

3. The method of claim 1 , wherein the second voltage is higher than the first voltage by at least 0.2 volts.

4. The method of claim 1 , wherein a range of the first voltage includes voltages from 0.6 volts to 0.8 volts and a range of the second voltage includes voltages from 1.0 volts to 1.2 volts.

5. The method of claim 1 , further comprising providing, at the first voltage, operating power to another portion of the write byte signal control logic that is configured to receive a write byte enable signal.

6. The method of claim 1 , wherein the portion of the write byte signal control logic comprises a latch configured to pulse the write byte signal received by the local word-line decoder.

7. The method of claim 1 , wherein generating the local word-line signal is effective to perform a local word-line boost operation.

8. A memory comprising:

a main word-line decoder powered by a first power rail configured to provide power at a first voltage;

a first portion of write byte signal control logic powered by the first power rail;

a second portion of the write byte signal control logic powered by a second power rail configured to provide power at a second voltage that is higher than the first voltage;

a local word-line decoder powered by the second power rail and configured to:

receive a main word-line signal generated by the main word-line decoder;

receive a write byte signal generated by the second portion of the write byte signal control logic; and

generate, in response to receiving the main word-line signal and the write byte signal, a local word-line signal effective to enable data to be written to the memory.

9. The memory of claim 8 , further comprising:

a controller configured to write a byte of the data within the memory in response to:

the local word-line signal generated by the local word-line decoder; and

complementary write bit-line signals indicating values for the byte of data.

10. The memory of claim 8 , further comprising:

a register file (RF) memory array; and

a controller configured to write a byte of the data within the RF memory array in response to:

the local word-line signal generated by the local word-line decoder; and

complementary write bit-line signals indicating values for the byte of data.

11. The memory of claim 8 , wherein the second portion of the write byte signal control logic comprises a write byte select pulsed latch and is configured to generate the write byte select signal in response to a write byte enable input signal received from the first portion of the write byte signal control logic.

12. The memory of claim 11 , wherein the second portion of the write byte signal control logic further comprises a level shifter configured to shift a write byte ready signal from a first signal level that corresponds to the first voltage to a second signal level that corresponds to the second voltage.

13. The memory of claim 8 , wherein storage elements of the memory are configured as eight transistor (8T) static random access memory (SRAM) register file (RF) bit cells.

14. The memory of claim 8 , wherein generation of the local word-line signal is effective to perform a local word-line boost operation.

15. A memory comprising:

means for providing, at a first voltage, operating power to a main word-line decoder of the memory;

means for providing, at a second voltage, operating power to a portion of write byte signal control logic and a local word-line decoder of the memory, the second voltage higher than the first voltage;

means for receiving a main word-line signal from the main word-line decoder;

means for receiving a write byte signal from the portion of the write byte signal control logic; and

means for causing, in response receiving to the main word-line signal and the write byte signal, the local word-line decoder to generate a local word-line signal effective to enable data to be written to the memory.

16. The memory of claim 15 , further comprising:

means for providing, at the first voltage, operating power to another portion of the write byte signal control logic; and

means for causing the other portion of the write byte signal control logic to generate the write byte signal in response to receiving a write byte enable input signal.

17. The memory of claim 16 , further comprising means for level shifting the write byte signal from a first signal level that corresponds to the first voltage to a second signal level that corresponds to the second voltage.

18. The memory of claim 15 , in which storage elements of the memory are configured as eight transistor (8T) static random access memory (SRAM) register file (RF) bit cells.

19. The memory of claim 15 , wherein generation of the local word-line signal is effective to perform a local word-line boost operation.

20. The memory of claim 15 , further comprising:

a register file (RF) memory array; and

means for writing a byte of the data within the RF memory array in response to:

the local word-line signal generated by the local word-line decoder; and

complementary write bit-line signals.