Method for determining a distance and an integrated magnetic field measuring device
View Patent ↗An integrated magnetic field measuring device is provided that includes a semiconductor body arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a first magnetic field sensor, formed in the semiconductor body and having a first sensor signal, and second magnetic field sensor having a second sensor signal, and a current-carrying first conductor. A third magnetic field sensor with a third sensor signal is formed in the semiconductor body. The first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor have a substantially identical orientation to Earth's magnetic field and a different distance to the first conductor and the magnetic field of the first conductor simultaneously penetrates the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor.
1. A method for determining a distance of a current-carrying first conductor, the method comprising:
providing an integrated magnetic field measuring device having a semiconductor body with a first magnetic field sensor formed in the semiconductor body, having a second magnetic field sensor; and having a third magnetic field sensor;
providing a first sensor signal from the first magnetic field sensor;
providing a second sensor signal form the second magnetic field sensor;
providing a third sensor signal from the third magnetic field sensor;
penetrating substantially simultaneously the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor by the magnetic field of the first conductor;
determining a first difference from the first sensor signal and the second sensor signal;
determining a second difference from the third and the second sensor signal; and
forming a quotient from the first difference and the second difference to determine a distance of the magnetic field from the current-carrying conductor.
2. The method according to claim 1 , wherein a linearization is performed before the determination of the distance via a comparison of the quotient with a value table such that a proportional dependence results between the determined distance and the quotient.
3. The method according to claim 1 , wherein a distance between the first magnetic field sensor and the second magnetic field sensor and between the second magnetic field sensor and the third magnetic field sensor is changed such that a proportional dependence results between the quotient and the first distance.
4. The method according to claim 1 , wherein the integrated magnetic field measuring device is configured to detect changes in a distance between a conductor and the first, second and third magnetic field sensors.
5. The method according to claim 1 , wherein the integrated magnetic field measuring device is configured to compensate for a deviation of the distance between the conductor and the first, second and third magnetic field sensors from a setpoint value.
6. The method according to claim 1 , wherein the integrated magnetic field measuring device is configured to fade out a magnetic field, and wherein a change in a magnetic flux between the first magnetic field sensor and the second magnetic field sensor and the third magnetic field sensor is precisely zero or nearly zero.
7. The method according to claim 1 , wherein the integrated magnetic field measuring device is configured to determine a current in a spaced-apart conductor.
8. An integrated magnetic field measuring device for determining a first distance of the magnetic field measuring device to a current-carrying first conductor, the device comprising:
a semiconductor body arranged on a metal substrate;
a first magnetic field sensor formed in the semiconductor body, the first magnetic field sensor being providing a first sensor signal;
a second magnetic field sensor formed in the semiconductor body, the second magnetic field sensor providing a second sensor signal;
a third magnetic field sensor formed in the semiconductor body, the third magnetic field sensor providing a third sensor signal; and
a control unit determining a first difference from the first sensor signal and the second sensor signal, determining a second difference from the third sensor signal and the second sensor signal, forming a quotient from the first difference and the second difference, and determining the first distance between the magnetic field measuring device and the first conductor from the quotient,
wherein the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor have a different distance to the first conductor, and
wherein the magnetic field of the first conductor substantially simultaneously penetrates the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor.
9. The integrated magnetic field measuring device according to claim 8 , wherein the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor are arranged substantially on a straight line.
10. The integrated magnetic field measuring device according to claim 8 , wherein the first, second and third magnetic field sensors and the control unit are integrated monolithically into the semiconductor body.
11. The integrated magnetic field measuring device according to claim 8 , wherein the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor are each formed as three dimensional magnetic field sensors.
12. The integrated magnetic field measuring device according to claim 8 , wherein the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor are each configured as Hall sensors.
13. The integrated magnetic field measuring device according to claim 8 , wherein the second magnetic field sensor is spaced apart differently from the first magnetic field sensor and the third magnetic field sensor.