Manufacturing method of grating
The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride (CF 4 ), sulfur hexafluoride (SF 6 ) and argon (Ar 2 ). Finally, the patterned mask layer is removed.
1. A manufacturing method of a grating, the method comprising:
providing a substrate;
forming a photoresist film on a surface of the substrate;
forming a nano-pattern on the photoresist film by nano-imprint lithography;
etching the photoresist film to form a patterned photoresist layer, wherein the patterned photoresist layer defines a plurality of cavities, and a first part of the surface of the substrate is exposed through the patterned photoresist layer;
covering a mask layer on the patterned photoresist layer and entire the first part of the surface of the substrate;
removing the patterned photoresist layer and the mask layer thereon to form a patterned mask layer, wherein the patterned mask layer is retained on the first part of the surface of the substrate, and a second part of the surface of the substrate is exposed through the patterned mask layer to form an exposed surface;
etching the substrate through the patterned mask layer by reactive ion etching, wherein etching gases used in the reactive ion etching comprise carbon tetrafluoride (CF 4 ), sulfur hexafluoride (SF 6 ) and argon (Ar 2 ), an etching power is in the range of 40 watts to 200 watts, and a plurality of third cavities is formed in the substrate by etching the exposed surface; and
removing the patterned mask layer.
2. The manufacturing method of claim 1 , wherein the material of the substrate is gallium nitride (GaN), gallium arsenide (GaAs), sapphire, aluminum oxide, magnesium oxide, silicon, silica, silicon nitride, silicon carbide, quartz, or glass.
3. The manufacturing method of claim 1 , wherein the material of the mask layer is chromium.
4. The manufacturing method of claim 1 , wherein the etching power is about 70 watts.
5. The manufacturing method of claim 1 , wherein the etching gases further comprises oxygen (O 2 ), and the flow volume of O 2 is in the range of grather than 0 sccm to about 10 sccm.
6. The manufacturing method of claim 5 , wherein CF 4 , SF 6 , Ar 2 , and O 2 are guided into a microwave plasma system simultaneously.
7. The manufacturing method of claim 1 , wherein the pressure of the etching gas is in the range of 1 pascal to 5 pascal.
8. The manufacturing method of claim 7 , wherein the pressure of the etching gas is about 2 pascal.
9. The manufacturing method of claim 1 , wherein the photoresist film is a two layer structure, the material of one of the two layers is polymethylmethacrylate (PMMA) and the material of the other of the two layers is hydrogen silsesquioxane (HSQ).
10. The manufacturing method of claim 9 , wherein the PMMA layer is disposed adjacent to the substrate.
11. The manufacturing method of claim 1 , wherein the flow volume of the etching gases is in the range of 40 sccm to 120 sccm.
12. The manufacturing method of claim 11 , wherein the flow volume of the etching gases is about 70 sccm.
13. The manufacturing method of claim 11 , wherein the flow volume of CF 4 is in the range of 1 sccm to 50 sccm, the flow volume of SF 6 is in the range of 10 sccm to 70 sccm, and the flow volume of Ar 2 is in the range of 10 sccm to 20 sccm.
14. The manufacturing method of claim 13 , wherein the flow volume of CF 4 is about 40 sccm, the flow volume of SF 6 is about 26 sccm, and the flow volume of Ar 2 is about 10 sccm.
15. A manufacturing method of a grating, the method comprising:
providing a substrate;
forming a first photoresist film on a surface of the substrate;
applying a second photoresist film on a surface of the first photoresist film away from the substrate;
forming a plurality of first cavities in the second photoresist film by nanoimprinting the first photoresist film, wherein the surface of the first photoresist film is exposed through the plurality of first cavities;
forming a plurality of second cavities by etching the first photoresist film exposed through the plurality of first cavities, wherein part of the surface of the substrate is exposed through the plurality of second cavities to form an exposed surface;
depositing a mask layer on the second photoresist film and the exposed surface of the substrate;
forming a patterned mask layer by removing the first photoresist film, the second photoresist film, and a portion of the mask layer deposited on the second photoresist film, wherein the patterned mask layer defines a plurality of third cavities, and the surface substrate is exposed through the plurality of third cavities;
etching the substrate through the patterned mask layer by reactive ion etching, wherein etching gases used in the reactive ion etching comprise carbon tetrafluoride, sulfur hexafluoride and argon; and
removing the patterned mask layer.
16. The manufacturing method of claim 15 , wherein sidewalls of the plurality of second cavities in first photoresist film are perpendicular with the surface of the substrate during etching the photoresist film.