Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like
View Patent ↗A method for synthesizing I-III-VI 2 compounds, including: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound under heat, with mixing, and/or via vapor transport. The Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C. Preferably, the Group I element consists of a neutron absorber and the group III element consists of In or Ga. The Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C. Preferably, the Group VI element consists of S, Se, or Te. Optionally, the method also includes doping with a Group IV element activator.
1. A method for synthesizing I-III-VI 2 compounds, comprising:
melting a Group III element;
subsequently adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound;
subsequently adding a Group VI element to the single phase I-III compound and heating; and
growing a bulk crystal from the resulting I-III-VI 2 compound without using a seed crystal.
2. The method of claim 1 , wherein the Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C.
3. The method of claim 1 , wherein 1 mole of the Group I element is added to 1 mole of the Group III element.
4. The method of claim 1 , wherein the Group I element comprises a neutron absorber and the Group III element comprises one of In and Ga.
5. The method of claim 1 , wherein the Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C.
6. The method of claim 1 , wherein 2 moles of the Group VI element are added to the single phase I-III compound.
7. The method of claim 1 , wherein the Group VI element comprises one of S, Se, and Te.
8. The method of claim 1 , further comprising doping with a Group IV element activator.
9. A method for synthesizing I-III-VI Z compounds, comprising:
melting a Group III element;
subsequently adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound;
subsequently adding a Group VI element to the single phase I-III compound under heat while mixing all constituents; and
growing a bulk crystal from the resulting I-III-VI 2 compound without using a seed crystal.
10. The method of claim 9 , wherein the Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C.
11. The method of claim 9 , wherein 1 mole of the Group I element is added to 1 mole of the Group III element.
12. The method of claim 9 , wherein the Group I element comprises a neutron absorber and the Group III element comprises one of In and Ga.
13. The method of claim 9 , wherein the Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C.
14. The method of claim 9 , wherein 2 moles of the Group VI element are added to the single phase I-III compound.
15. The method of claim 9 , wherein the Group VI element comprises one of S, Se, and Te.
16. The method of claim 9 , further comprising doping with a Group IV element activator.
17. The method of claim 9 , wherein mixing all constituents comprises rotating all constituents at an angle.