Light emitting device
View Patent ↗A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.
1. A light-emitting device, comprising:
a first type semiconductor layer;
a multi-quantum well structure on the first type semiconductor layer; and
a second type semiconductor layer on the multi-quantum well structure,
wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer,
wherein the first portion comprises a plurality of first well layers and a plurality of first barrier layers alternately stacked, and the second portion comprises a plurality of second well layers and a plurality of second barrier layers alternately stacked, and
wherein the energy level of the conduction band of the second layer is higher than that of the plurality of first well layers, the plurality of first barrier layers, the plurality of second well layers, and the plurality of second barrier layers.
2. A light-emitting device according to claim 1 , wherein the second layer comprises Si or P.
3. A light-emitting device according to claim 1 , wherein a thickness of the second layer is between 100 Å and 300 Å.
4. A light-emitting device according to claim 1 , wherein the plurality of first well layers comprises Indium.
5. A light-emitting device according to claim 1 , wherein the second layer is thicker than each of the plurality of first barrier layers.
6. A light-emitting device according to claim 4 , wherein the plurality of second well layers comprises Indium.
7. A light-emitting device according to claim 6 , wherein the first type semiconductor layer comprises an n-type semiconductor layer, the second type semiconductor layer comprises a p-type semiconductor layer, and the Indium concentration of the plurality of second well layers is higher than that of the plurality of first well layers.
8. A light-emitting device according to claim 1 , wherein the second portion further comprises an electron block layer near the second type semiconductor layer.
9. A light-emitting device according to claim 8 , wherein the electron block layer comprises Aluminum.
10. A light-emitting device according to claim 9 , wherein the energy level of the conduction band of electron block layer is higher than that of the plurality of first well layers, the plurality of first barrier layers, the plurality of second well layers, and the plurality of second barrier layers.
11. A light-emitting device according to claim 8 , wherein the electron block layer is doped with Mg or Be.
12. A light-emitting device according to claim 8 , wherein the energy level of the conduction band of the electron block layer is higher than that of the plurality of second well layers and the plurality of second barrier layers.
13. A light-emitting device according to claim 1 , wherein the second portion emits a blue light.