Bulk acoustic wave resonator having piezoelectric layer with multiple dopants
View Patent ↗A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer.
1. A bulk acoustic wave (BAW) resonator structure, comprising:
a first electrode disposed over a substrate;
a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising a piezoelectric material doped with a plurality of rare earth elements for improving piezoelectric properties of the piezoelectric layer; and
a second electrode disposed over the piezoelectric layer.
2. The BAW resonator according to claim 1 , wherein the piezoelectric material comprises aluminum nitride (AlN).
3. The BAW resonator according to claim 2 , wherein the plurality of rare earth elements comprises two rare earth elements incorporated into a crystal lattice of the AlN piezoelectric material.
4. The BAW resonator according to claim 3 , wherein the plurality of rare earth elements comprises scandium (Sc) and erbium (Er).
5. The BAW resonator according to claim 4 , wherein the plurality of rare earth elements further comprises yttrium (Y).
6. The BAW resonator according to claim 4 , wherein a concentration of each of the scandium and the erbium is less than approximately 10 atomic percent of the piezoelectric material.
7. The BAW resonator according to claim 6 , wherein the concentration of each of the scandium and the erbium is less than approximately one atomic percent of the piezoelectric material.
8. The BAW resonator according to claim 7 , wherein the concentration of scandium is approximately 0.63 atomic percent of the piezoelectric material, and the concentration of erbium is approximately 0.34 atomic percent of the piezoelectric material.
9. The BAW resonator according to claim 2 , wherein the plurality of rare earth elements comprises more than two rare earth elements incorporated into a crystal lattice of the AlN piezoelectric material.
10. The BAW resonator according to claim 2 , wherein the piezoelectric layer is provided using a target formed of an alloy comprising aluminum and the plurality of doping elements, and sputtering the aluminum alloy from the target over the bottom electrode using a plasma comprising nitrogen.
11. The BAW resonator according to claim 1 , wherein the piezoelectric layer is provided using a plurality of targets formed of aluminum and the plurality of doping elements, respectively, and sputtering the aluminum and the plurality of doping elements from the corresponding targets over the bottom electrode using a plasma comprising nitrogen.
12. A thin film bulk acoustic resonator (FBAR) structure, comprising:
a substrate defining a cavity;
a first electrode disposed over the substrate, at least a portion of the first electrode being formed over the cavity in the substrate;
a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising a piezoelectric material doped with a plurality of rare earth elements for improving piezoelectric properties of the piezoelectric layer; and
a second electrode disposed over the piezoelectric layer.
13. The FBAR structure resonator according to claim 12 , wherein the piezoelectric material comprises aluminum nitride (AlN).
14. The FBAR structure resonator according to claim 13 , wherein the plurality of rare earth elements comprises scandium (Sc) and erbium (Er).
15. The FBAR structure according to claim 14 , wherein a concentration of each of the scandium and the erbium is less than approximately one atomic percent of the AlN.
16. A solidly mounted resonator (SMR) structure, comprising:
a substrate;
an acoustic reflector formed on the substrate, the acoustic reflector comprising a plurality of acoustic impedance layers, wherein at least two of the acoustic impedance layers have different acoustic impedances;
a first electrode disposed over the acoustic reflector;
a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising a piezoelectric material doped with a plurality of rare earth elements for improving piezoelectric properties of the piezoelectric layer; and
a second electrode disposed over the piezoelectric layer.
17. The SMR structure according to claim 16 , wherein the acoustic reflector comprises a distributed Bragg reflector (DBR).
18. The SMR structure according to claim 17 , wherein the piezoelectric material comprises aluminum nitride (AlN).
19. The SMR structure according to claim 18 , wherein the plurality of rare earth elements comprises scandium (Sc) and erbium (Er).
20. The SMR structure according to claim 19 , wherein a concentration of each of the scandium and the erbium is less than approximately 10 atomic percent of the AlN.