Semiconductor integrated circuit, and reception apparatus and radio communication terminal including semiconductor integrated circuit
View Patent ↗A semiconductor integrated circuit includes: a first capacitance element and a second capacitance element; a first amplification circuit that amplifies a potential difference of a first voltage signal and a second voltage signal supplied via the first capacitance element and the second capacitance element, respectively, to output a first amplification signal and a second amplification signal; a first resistance element that feeds back the first amplification signal to one input terminal of the first amplification circuit; a second resistance element that feeds back the second amplification signal to another input terminal of the first amplification circuit; a voltage generator that generates a predetermined voltage; and a third resistance element that transmits the predetermined voltage generated by the voltage generator to each input terminal of the first amplification circuit.
1. A semiconductor integrated circuit, comprising:
a first capacitance element and a second capacitance element;
a first amplification circuit that amplifies a potential difference of a first voltage signal and a second voltage signal supplied via the first capacitance element and the second capacitance element, respectively, to output a first amplification signal and a second amplification signal;
a first resistance element that feeds back the first amplification signal to one input terminal of the first amplification circuit;
a second resistance element that feeds back the second amplification signal to another input terminal of the first amplification circuit;
a voltage generator that generates a predetermined voltage; and
a third resistance element that transmits the predetermined voltage generated by the voltage generator to each input terminal of the first amplification circuit,
wherein the voltage generator includes a fourth resistance element and a fifth resistance element that are connected in series between a high-potential side power supply and a low potential side power supply, and a diode that clamps the voltage of the node between the fourth resistance element and the fifth resistance element, and
wherein the voltage generator generates a voltage of a node between the fourth resistance element and the fifth resistance element as the predetermined voltage.
2. A semiconductor integrated circuit, comprising:
a first capacitance element and a second capacitance element;
a first amplification circuit that amplifies a potential difference of a first voltage signal and a second voltage signal supplied via the first capacitance element and the second capacitance element, respectively, to output a first amplification signal and a second amplification signal;
a first resistance element that feeds back the first amplification signal to one input terminal of the first amplification circuit;
a second resistance element that feeds back the second amplification signal to another input terminal of the first amplification circuit;
a voltage generator that generates a predetermined voltage; and
a third resistance element that transmits the predetermined voltage generated by the voltage generator to each input terminal of the first amplification circuit,
wherein the voltage generator includes a current generator through which a constant current flows, a fourth resistance element that is connected in series with the current generator, and a diode that clamps the voltage of the node between the fourth resistance element and the current generator, and
wherein the voltage generator generates a voltage of a node between the fourth resistance element and the current generator as the predetermined voltage.
3. The semiconductor integrated circuit according to claim 1 , wherein the voltage generator comprises a second amplification circuit that amplifies a potential difference between a reference voltage and the predetermined voltage that is fed back, to output the predetermined voltage.
4. The semiconductor integrated circuit according to claim 1 , wherein the voltage generator generates the predetermined voltage having a voltage level substantially equal to a voltage level of a common-mode component of the first amplification signal and the second amplification signal output from the first amplification circuit.
5. The semiconductor integrated circuit according to claim 1 , further comprising a mixer circuit between the first and the second capacitance elements and the first amplification circuit.
6. The semiconductor integrated circuit according to claim 5 , wherein the third resistance element transmits the predetermined voltage generated by the voltage generator to each input terminal of the first amplification circuit via the mixer circuit.
7. The semiconductor integrated circuit according to claim 5 , wherein the mixer circuit comprises a plurality of MOS transistors.
8. The semiconductor integrated circuit according to claim 1 , wherein the third resistance element is formed of polycrystalline silicon.
9. The semiconductor integrated circuit according to claim 1 , wherein the third resistance element comprises a diffused resistor.
10. A reception apparatus that comprises the semiconductor integrated circuit according to claim 1 .
11. A radio communication terminal that comprises the semiconductor integrated circuit according to claim 1 .