Semiconductor device

1. A semiconductor device comprising:

a power supply active region extending in a first direction;

an active region located at one side of the power supply active region in a second direction perpendicular to the first direction and serving as a source or a drain of a transistor;

a gate interconnect located at the side of the power supply active region, at which the active region is located, in the second direction, and serving as a gate of the transistor;

a power supply metal interconnect located above the power supply active region;

a circuit metal interconnect located above the active region and the gate interconnect;

a plurality of power supply plugs coupling the power supply active region to the power supply metal interconnect; and

a plurality of interconnect plugs coupling the active region or the gate interconnect to the circuit metal interconnect, wherein:

the plurality of power supply plugs include:

a plurality of first plugs arranged at first pitches of a predetermined length, and

a second plug spaced apart from closest one of the plurality of first plugs by a center-to-center distance which is different from an integral multiple of the predetermined length,

the plurality of interconnect plugs include a third plug closest to the power supply active region and the power supply metal interconnect, and

among the plurality of power supply plugs, the second plug is closest to the third plug.

2. The semiconductor device of claim 1 , wherein:

the second plug includes a plurality of second plugs,

the third plug includes a plurality of third plugs, and

each of the plurality of third plugs is closest to one of the plurality of second plugs among the plurality of power supply plugs.

3. The semiconductor device of claim 1 , herein:

the second plug includes a plurality of second plugs,

the third plug includes a plurality of third plugs, and

at least one of the plurality of second plugs is closest to one of the plurality of third plugs among the plurality of interconnect plugs.

4. The semiconductor device of claim 1 , wherein:

the second plug includes a plurality of second plugs, and

a center-to-center distance between the plurality of second plugs is the integral multiple of the predetermined length.

5. The semiconductor device of claim 1 , wherein

a distance from a center of each of the plurality of interconnect plugs to closest one of the plurality of power supply plugs is preferably greater than 2.5 times a diameter of the plurality of interconnect plugs.

6. The semiconductor device of claim 1 , wherein

the second plug has a rectangular or oval shape as viewed in plan.

7. The semiconductor device of claim 1 , wherein

the active region, the gate interconnect, and the circuit metal interconnect form a flip-flop circuit or a latch circuit.

8. A semiconductor device comprising:

a first power supply active region and a second power supply active region extending in a first direction;

an active region located between the first and second power supply active regions, and serving as a source or a drain of a transistor;

a gate interconnect located between the first and second power supply active regions, and serving as a gate of the transistor;

a power supply metal interconnect located above the first power supply active region;

a circuit metal interconnect located above the active region and the gate interconnect;

a plurality of power supply plugs coupling the first power supply active region to the power supply metal interconnect; and

a plurality of interconnect plugs coupling the active region or the gate interconnect to the circuit metal interconnect, wherein:

the plurality of power supply plugs include:

a plurality of first plugs arranged at first pitches of a predetermined length; and

a second plug spaced apart from closest one of the plurality of first plugs by a center-to-center distance which is different from an integral multiple of the predetermined length,

the plurality of interconnect plugs include a third plug closest to the first power supply active region and the power supply metal interconnect, and

among the plurality of power supply plugs, the second plug is closest to the third plug.