Semiconductor device
View Patent ↗A semiconductor device includes: a first field-effect transistor of a first conductivity type formed on a first active region of a semiconductor substrate. The first field-effect transistor includes a first gate insulating film formed on the first active region, and a first gate electrode formed on the first gate insulating film. The first gate electrode includes a first metal electrode formed on the first gate insulating film, a first interface layer formed on the first metal electrode, and a first silicon electrode formed on the first interface layer.
1. A semiconductor device comprising:
a first field-effect transistor of a first conductivity type formed on a first active region of a semiconductor substrate; and
a second field-effect transistor of a second conductivity type formed on a second active region of the semiconductor substrate, wherein
the first field-effect transistor includes:
a first gate insulating film formed on the first active region, and
a first gate electrode formed on the first gate insulating film,
the first gate electrode includes:
a first metal electrode formed on the first gate insulating film,
a first interface layer formed on the first metal electrode, and
a first silicon electrode formed on the first interface layer,
the second field-effect transistor includes:
a second gate insulating film formed on the second active region, and
a second gate electrode formed on the second gate insulating film,
the second gate electrode includes:
a second metal electrode formed on the second gate insulating film,
a second interface layer formed on the second metal electrode,
a second silicon electrode formed on the second interface layer, and
the first interface layer and the second interface layer contain different insulating materials.
2. The semiconductor device of claim 1 , wherein
the first interface layer includes a first lower film formed on the first metal electrode, and a first upper film formed on the first lower film, and
the first lower film and the first upper film are made of different insulating materials.
3. The semiconductor device of claim 2 , wherein one of the first lower film and the first upper film is a first silicon dioxide film, and the other of the first lower film and the first upper film is a first metal oxide film.
4. The semiconductor device of claim 3 , wherein
the first field-effect transistor is an n-type transistor,
the first lower film is the first metal oxide film,
the first upper film is the first silicon dioxide film, and
the first metal oxide film is made of lanthanum oxide, germanium oxide, yttrium oxide, lutetium oxide, or strontium oxide.
5. The semiconductor device of claim 3 , wherein
the first field-effect transistor is an n-type transistor,
the first lower film is the first silicon dioxide film,
the first upper film is the first metal oxide film, and
the first metal oxide film is made of aluminum oxide, magnesium oxide, hafnium oxide, zirconium oxide, titanium oxide, tantalum oxide, or scandium oxide.
6. The semiconductor device of claim 2 , wherein
the first field-effect transistor is an n-type transistor, and
the first lower film has a lower surface density of oxygen atoms than the first upper film.
7. The semiconductor device of claim 3 , wherein
the first field-effect transistor is a p-type transistor,
the first lower film is the first metal oxide film,
the first upper film is the first silicon dioxide film, and
the first metal oxide film is made of aluminum oxide, magnesium oxide, hafnium oxide, zirconium oxide, titanium oxide, tantalum oxide, or scandium oxide.
8. The semiconductor device of claim 3 , wherein
the first field-effect transistor is a p-type transistor,
the first lower film is the first silicon dioxide film,
the first upper film is the first metal oxide film, and
the first metal oxide film is made of lanthanum oxide, germanium oxide, yttrium oxide, lutetium oxide, or strontium oxide.
9. The semiconductor device of claim 2 , wherein
the first field-effect transistor is a p-type transistor, and
the first lower film has a higher surface density of oxygen atoms than the first upper film.
10. The semiconductor device of claim 3 , wherein
the first silicon dioxide film has a thickness greater than or equal to 0.3 nm and equal to or less than 1.0 nm, and
the first metal oxide film has a thickness greater than or equal to 0.3 nm and equal to or less than 2.0 nm.
11. The semiconductor device of claim 1 , wherein
the second interface layer includes a second lower film formed on the second metal electrode, and a second upper film formed on the second lower film, and
the second lower film and the second upper film are made of different insulating materials.
12. The semiconductor device of claim 11 , wherein
the first field-effect transistor is an n-type transistor,
the second field-effect transistor is a p-type transistor,
the first lower film is a first metal oxide film,
the first upper film is a first silicon dioxide film,
the second lower film is a second metal oxide film,
the second upper film is a second silicon dioxide film, and
the first metal oxide film and the second metal oxide film are made of different insulating materials.
13. The semiconductor device of claim 12 , wherein
the first metal oxide film is made of lanthanum oxide, germanium oxide, yttrium oxide, lutetium oxide, or strontium oxide, and
the second metal oxide film is made of aluminum oxide, magnesium oxide, hafnium oxide, zirconium oxide, titanium oxide, tantalum oxide, or scandium oxide.
14. The semiconductor device of claim 11 , wherein
the first field-effect transistor is an n-type transistor,
the second field-effect transistor is a p-type transistor,
the first lower film is a first silicon dioxide film,
the first upper film is a first metal oxide film,
the second lower film is a second silicon dioxide film,
the second upper film is a second metal oxide film, and
the first metal oxide film and the second metal oxide film are made of different insulating materials.
15. The semiconductor device of claim 14 , wherein
the first metal oxide film is made of aluminum oxide, magnesium oxide, hafnium oxide, zirconium oxide, titanium oxide, tantalum oxide, or scandium oxide, and
the second metal oxide film is made of lanthanum oxide, germanium oxide, yttrium oxide, lutetium oxide, or strontium oxide.
16. The semiconductor device of claim 1 , wherein the first interface layer has a dipole reducing a height of a Schottky barrier formed between the first metal electrode and the first silicon electrode.
17. The semiconductor device of claim 1 , wherein the first metal electrode is made of a metal material causing a Schottky barrier to occur at an interface formed by bringing the first metal electrode into direct contact with the first silicon electrode.
18. The semiconductor device of claim 1 , wherein the second interface layer has a dipole reducing a height of a Schottky barrier formed between the second metal electrode and the second silicon electrode.
19. The semiconductor device of claim 1 , wherein the second metal electrode is made of a metal material causing a Schottky barrier to occur at an interface formed by bringing the second metal electrode into direct contact with the second silicon electrode.